Hybrid graphene–quantum dot phototransistors with ultrahigh gain

Konstantatos, Gerasimos, Badioli, Michela, Gaudreau, Louis, Osmond, Johann, Bernechea, Maria ORCID: https://orcid.org/0000-0003-2800-6845, de Arquer, F. Pelayo Garcia, Gatti, Fabio and Koppens, Frank H. L. 2012. Hybrid graphene–quantum dot phototransistors with ultrahigh gain. Nature Nanotechnology 7 (6) , pp. 363-368. 10.1038/nnano.2012.60

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Abstract

Graphene is an attractive material for optoelectronics1 and photodetection applications2, 3, 4, 5, 6 because it offers a broad spectral bandwidth and fast response times. However, weak light absorption and the absence of a gain mechanism that can generate multiple charge carriers from one incident photon have limited the responsivity of graphene-based photodetectors to ~10−2 A W−1. Here, we demonstrate a gain of ~108 electrons per photon and a responsivity of ~107 A W−1 in a hybrid photodetector that consists of monolayer or bilayer graphene covered with a thin film of colloidal quantum dots. Strong and tunable light absorption in the quantum-dot layer creates electric charges that are transferred to the graphene, where they recirculate many times due to the high charge mobility of graphene and long trapped-charge lifetimes in the quantum-dot layer. The device, with a specific detectivity of 7 × 1013 Jones, benefits from gate-tunable sensitivity and speed, spectral selectivity from the short-wavelength infrared to the visible, and compatibility with current circuit technologies.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Publisher:	Nature Publishing Group
ISSN:	1748-3387
Date of First Compliant Deposit:	11 August 2016
Date of Acceptance:	23 March 2012
Last Modified:	01 Nov 2022 11:04
URI:	https://orca.cardiff.ac.uk/id/eprint/93768

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