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Online Research @ Cardiff

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Number of items: 5.

Ha, Minh Thien Huu, Huynh, Sa Hoang, Do, Huy Binh, Lee, Ching Ting, Luc, Quang Ho and Chang, Edward Yi 2019. The effect of a Sb and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaAs grown by metalorganic chemical vapor deposition. Thin Solid Films 669 , pp. 430-435. 10.1016/j.tsf.2018.10.056

Huynh, Sa Hoang, Kim, Hyunseok, Gong, Yongkang, Azizur-Rahman, Khalifa

, Li, Qiang

and Huffaker, Diana

2019. Catalyst-free selective-area metalorganic chemical vapour deposition of InGaAs/InGaP core-shell nanowire arrays. Presented at: UK Semiconductors 2019 Conference, Sheffield, United Kingdom, 10-11 July 2019.

Luc, Q. H., Fan-Chiang, C. C., Huynh, S. H., Huang, P., Do, H. B., Ha, M. T. H., Jin, Y. D., Nguyen, T. A., Zhang, K. Y., Wang, H. C., Lin, Y. K., Lin, Y. C., Hu, C., Iwai, H. and Chang, E. Y. 2018. First experimental demonstration of negative capacitance InGaAs MOSFETs with Hf0.5Zr0.5O2 ferroelectric gate stack. Presented at: IEEE Symposium on VLSI Technology, Honolulu, USA, 18-22 Jun 2018. IEEE Symposium on VLSI Technology. Symposium on Vlsi Technology. Piscataway, NJ: IEEE, pp. 47-48. 10.1109/VLSIT.2018.8510644

Ha, Minh Thien Huu, Huynh, Sa Hoang, Do, Huy Binh, Nguyen, Tuan Anh, Luc, Quang Ho, Lee, Ching Ting and Chang, Edward Yi 2018. Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition. Applied Physics Express 11 (5) , 051202. 10.7567/APEX.11.051202

Huynh, Sa Hoang, Ha, Minh Thien Huu, Binh Do, Huy, Nguyen, Tuan Anh, Luc, Quang Ho and Chang, Edward Yi 2018. Nonlinear dependence of X-ray diffraction peak broadening in In x Ga1− x Sb epitaxial layers on GaAs substrates. Applied Physics Express 11 (4) , 045503. 10.7567/APEX.11.045503

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