X-Band GaN SPDT MMIC with over 25 watt linear power handling

Janssen, Jochem, Hilton, Keith P., Maclean, Jessica O., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Powell, Jeff, Uren, Michael, Martin, Trevor, van Heijningen, Marc and van Vliet, Frank 2009. X-Band GaN SPDT MMIC with over 25 watt linear power handling. Presented at: European Microwave Integrated Circuit Conference, 2008, Amsterdam, The Netherlands, 27-28 October 2009. 2008 European Microwave Integrated Circuit Conference. IEEE, 10.1109/EMICC.2008.4772261

Full text not available from this repository.

Abstract

Single Pole Double Throw (SPDT) switches are becoming more and more key components in phased-array radar transmit/receive modules. An SPDT switch must be able to handle the output power of a high power amplifier and must provide enough isolation to protect the low noise amplifier in the receive chain when the T/R module is transmitting. Therefore Gallium Nitride technology seems to become a key technology for high power SPDT switch design. The technology shows good performance on microwave frequencies and is able to handle high power. An X-band SPDT switch, with a linear power handling of over 25 W, has been designed, measured and evaluated. The circuit is designed in the coplanar waveguide AlGaN/GaN technology established at QinetiQ.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	IEEE
ISBN:	9782874870071
Last Modified:	23 Oct 2022 13:02
URI:	https://orca.cardiff.ac.uk/id/eprint/109512

Citation Data

Cited 17 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item