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Number of items: 71.

Ghosh, Saptarsi, Frentrup, Martin, Hinz, Alexander M., Pomeroy, James W., Field, Daniel, Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Kuball, Martin and Oliver, Rachel A. 2025. Buffer-less gallium nitride high electron mobility heterostructures on silicon. Advanced Materials 37 (9) , 2413127. 10.1002/adma.202413127
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Adams, Francesca, Ghosh, Saptarsi, Liang, Zhida, Chen, Chen, Suphannarat, Noppasorn, Kappers, Menno J., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583 and Oliver, Rachel A. 2025. Behaviour of Ti/Al/Ti/Au contacts to AlGaN/GaN heterostructures at low temperature. Journal of Physics D: Applied Physics 58 (13) , 135117. 10.1088/1361-6463/adafb5
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Gundimeda, Abhiram, Kusch, Gunnar, Frentrup, Martin, Xiu, Huixin, Shu, Ruiying, Hofer, Christina, Bagot, Paul A. J., Moody, Michael P., Kappers, Menno J., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583 and Oliver, Rachel A. 2024. Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well. Journal of Physics D: Applied Physics 58 (2) , 025112. 10.1088/1361-6463/ad8662
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Dyer, D., Church, S. A., Ahumada-Lazo, R., Kappers, M. J., M.P. Halsall, M.P., Parkinson, P., Wallis, D.J. ORCID: https://orcid.org/0000-0002-0475-7583, Oliver, R.A. and Binks, D.J. 2024. Efficiency droop in zincblende InGaN/GaN quantum wells. Nanoscale 16 (29) , pp. 13953-13961. 10.1039/D4NR00812J
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Gundimeda, Abhiram, Kusch, Gunnar, Frentrup, Martin, Kappers, Menno J., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583 and Oliver, Rachel A. 2024. Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well. Nanotechnology 35 (39) , 395705. 10.1088/1361-6528/ad5db4
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Chen, Chen, Ghosh, Saptarsi, De Wolf, Peter, Liang, Zhida, Adams, Francesca, Kappers, Menno J., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583 and Oliver, Rachel A. 2024. Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy. Applied Physics Letters 124 (23) , 232107. 10.1063/5.0203646
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Chen, Chen, Ghosh, Saptarsi, Adams, Francesca, Kappers, Menno J., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583 and Oliver, Rachel A. 2023. Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide. Ultramicroscopy 254 , 113833. 10.1016/j.ultramic.2023.113833
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Hinz, Alexander M., Ghosh, Saptarsi, Fairclough, Simon M., Griffiths, James T., Kappers, Menno J., Oliver, Rachel A. and Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583 2023. Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures. Journal of Crystal Growth 624 , 127420. 10.1016/j.jcrysgro.2023.127420
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Leigh, William, Mandal, Soumen ORCID: https://orcid.org/0000-0001-8912-1439, Cuenca, Jerome A. ORCID: https://orcid.org/0000-0003-1370-1167, Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Hinz, Alexander M., Oliver, Rachel A., Thomas, Evan L. H. and Williams, Oliver ORCID: https://orcid.org/0000-0002-7210-3004 2023. Monitoring of the initial stages of diamond growth on aluminum nitride using in situ spectroscopic ellipsometry. ACS Omega 8 (33) , pp. 30442-30449. 10.1021/acsomega.3c03609
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Yang, Hao, Bruckbauer, Jochen, Kanibolotska, Lyudmyla, Kanibolotsky, Alexander L., Cameron, Joseph, Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Martin, Robert W. and Skabara, Peter J. 2023. A cross-linkable, organic down-converting material for white light emission from hybrid LEDs. Journal of Materials Chemistry C Materials for optical and electronic devices 11 (29) , pp. 9984-9995. 10.1039/D2TC05139G
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Wadsworth, Aaron, Thrimawithana, Duleepa J., Zhao, Lei, Neuburger, Martin, Oliver, Rachel A. and Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583 2023. GaN-based cryogenic temperature power electronics for superconducting motors in cryo-electric aircraft. Superconductor Science and Technology 36 (9) , 094002. 10.1088/1361-6668/ace5e7
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Wade, T.J., Gundimeda, A., Kappers, M.J., Frentrup, M., Fairclough, S.M., Wallis, D.J. ORCID: https://orcid.org/0000-0002-0475-7583 and Oliver, R.A. 2023. MOVPE studies of zincblende GaN on 3C-SiC/Si(0 0 1). Journal of Crystal Growth 611 , 127182. 10.1016/j.jcrysgro.2023.127182
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Ghosh, Saptarsi, Hinz, Alexander M., Frentrup, Martin, Alam, Saiful, Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583 and Oliver, Rachel 2023. Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD. Semiconductor Science and Technology 38 (4) , 044001. 10.1088/1361-6641/acb9b6
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Xiu, Huixin, Fairclough, Simon M., Gundimeda, Abhiram, Kappers, Menno J., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Oliver, Rachel A. and Frentrup, Martin 2023. Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopy. Journal of Applied Physics 133 , 105302. 10.1063/5.0138478
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Binks, D. J., Dawson, P., Oliver, R. A. and Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583 2022. Cubic GaN and InGaN/GaN quantum wells. Applied Physics Reviews 9 , 041309. 10.1063/5.0097558
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Yin, Yidi, Pinchbeck, Joseph, O'Regan, Colm, Guiney, Ivor, Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583 and Lee, Kean Boon 2022. Fabrication of semi-polar (11-22) GaN V-groove MOSFET using wet etching trench opening technique. IEEE Electron Device Letters 43 (10) , pp. 1641-1644. 10.1109/LED.2022.3203633

Gundimeda, Abhiram, Rostami, Mohammadreza, Frentrup, Martin, Hinz, Alexander, Kappers, Menno J., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583 and Oliver, Rachel A. 2022. Influence of AlxGa1-xN nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001). Journal of Physics D: Applied Physics 55 (7) , 175110. 10.1088/1361-6463/ac4c58
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Gundimeda, Abhiram, Frentrup, Martin, Fairclough, Simon M., Kappers, Menno J., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583 and Oliver, Rachel A. 2022. Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1−xN nucleation layers. Journal of Applied Physics 131 (11) , 115703. 10.1063/5.0077186
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Dyer, D., Church, S. A., Jain, M., Kappers, M. J., Frentrup, M., Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583, Oliver, R. A. and Binks, D. J. 2021. The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers. Journal of Applied Physics 130 (8) , 085705. 10.1063/5.0057824
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Spiridon, B. F., Toon, M., Hinz, A., Ghosh, S., Fairclough, S. M., Guilhabert, B. J. E., Strain, M. J., Watson, I. M., Dawson, M. D., Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583 and Oliver, R. A. 2021. Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis. Optical Materials Express 11 (6) , pp. 1643-1655. 10.1364/OME.418728
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Church, S. A., Quinn, M., Cooley-Greene, K., Ding, B., Gundimeda, A., Kappers, M. J., Frentrup, M., Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583, Oliver, R. A. and Binks, D. J. 2021. Photoluminescence efficiency of zincblende InGaN/GaN quantum wells. Journal of Applied Physics 129 , 175702. 10.1063/5.0046649
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Vacek, Petr, Frentrup, Martin, Lee, Lok Yi, Massabuau, Fabien C.-P., Kappers, Menno J., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Gröger, Roman and Oliver, Rachel A. 2021. Defect structures in (001) zincblende GaN/3C-SiC nucleation layers. Journal of Applied Physics 129 (15) , 155306. 10.1063/5.0036366
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Cuenca, Jerome A. ORCID: https://orcid.org/0000-0003-1370-1167, Smith, Matthew D., Field, Daniel E., C-P. Massabuau, Fabien, Mandal, Soumen ORCID: https://orcid.org/0000-0001-8912-1439, Pomeroy, James, Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Oliver, Rachel A., Thayne, Iain, Kuball, Martin and Williams, Oliver A. ORCID: https://orcid.org/0000-0002-7210-3004 2021. Thermal stress modelling of diamond on GaN/III-Nitride membranes. Carbon 174 , pp. 647-661. 10.1016/j.carbon.2020.11.067
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Sun, Chao, Wu, Fangda, Fu, Yongqing, Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Mikhaylov, Roman, Yuan, Fan, Liang, Dongfang, Xie, Zhihua ORCID: https://orcid.org/0000-0002-5180-8427, Wang, Hanlin, Tao, Ran, Hong Shen, Ming, Yang, Jian ORCID: https://orcid.org/0000-0002-8429-7598, Xun, Wenpeng, Wu, Zhenlin, Yang, Zhiyong ORCID: https://orcid.org/0000-0002-8429-7598, Cang, Huaixing and Yang, Xin ORCID: https://orcid.org/0000-0002-8429-7598 2020. Thin film gallium nitride (GaN) based acoustofluidic tweezer: modelling and microparticle manipulation. Ultrasonics 108 , 106202. 10.1016/j.ultras.2020.106202
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Ding, B., Frentrup, M., Fairclough, S. M., Kappers, M. J., Jain, M., Kovács, A., Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583 and Oliver, R. A. 2020. Alloy segregation at stacking faults in zincblende GaN heterostructures. Journal of Applied Physics 128 (14) , 145703. 10.1063/5.0015157
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Sun, Chao, Wu, Fangda, Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Shen, Ming Hong ORCID: https://orcid.org/0000-0002-3891-7231, Yuan, Fan, Yang, Jian ORCID: https://orcid.org/0000-0002-8429-7598, Wu, Jianzhong, Xie, Zhihua ORCID: https://orcid.org/0000-0002-5180-8427, Liang, Dongfang, Wang, Hanlin, Tickle, Rowan, Mikhaylov, Roman, Clayton, Aled ORCID: https://orcid.org/0000-0002-3087-9226, Zhou, You ORCID: https://orcid.org/0000-0002-1743-1291, Wu, Zhenlin, Fu, Yongqing, Xun, Wenpeng and Yang, Xin ORCID: https://orcid.org/0000-0002-8429-7598 2020. Gallium nitride: a versatile compound semiconductor as novel piezoelectric film for acoustic tweezer in manipulation of cancer cells. IEEE Transactions on Electron Devices 67 (8) , pp. 3355-3361. 10.1109/TED.2020.3002498

Church, S. A., Ding, B., Mitchell, P. W., Kappers, M. J., Frentrup, M., Kusch, G., Fairclough, M., Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583, Oliver, R. A. and Binks, D. J. 2020. Stacking fault-associated polarised surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells. Applied Physics Letters 117 (3) , 032103. 10.1063/5.0012131
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Wiles, Alan A., Bruckbauer, Jochen, Mohammed, Nabeel, Cariello, Michele, Camero, Joseph, Findlay, Neil J., Taylor-Shaw, Elaine, Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Martin, Robert W., Skabara, Peter J. and Cooke, Graeme 2020. A poly(urethane)-encapsulated benzo[2,3-d:6,7-d’]diimidazole organic down-converter for green hybrid LEDs. Materials Chemistry Frontiers 4 (3) , pp. 1006-1012. 10.1039/C9QM00771G
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Mandal, Soumen ORCID: https://orcid.org/0000-0001-8912-1439, Yuan, Chao, Massabuau, Fabien, Pomeroy, James W., Cuenca, Jerome ORCID: https://orcid.org/0000-0003-1370-1167, Bland, Henry, Thomas, Evan, Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Batten, Tim, Morgan, David ORCID: https://orcid.org/0000-0002-6571-5731, Oliver, Rachel, Kuball, Martin and Williams, Oliver A. ORCID: https://orcid.org/0000-0002-7210-3004 2019. Thick, adherent diamond films on AlN with low thermal barrier resistance. ACS Applied Materials and Interfaces 11 (43) , pp. 40826-40834. 10.1021/acsami.9b13869
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Lee, Lok Yi, Frentrup, Martin, Vacek, Petr, Massabuau, Fabien C.-P., Kappers, Menno J., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583 and Oliver, Rachel A. 2019. Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates. Journal of Crystal Growth 524 , 125167. 10.1016/j.jcrysgro.2019.125167
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Lee, Lok Yi, Frentrup, Martin, Vacek, Petr, Kappers, Menno J, Wallis, David J ORCID: https://orcid.org/0000-0002-0475-7583 and Oliver, Rachel A 2019. Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM. Journal of Applied Physics 125 , 105303. 10.1063/1.5082846
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Angioni, Enrico, Marshall, Ross J., Findlay, Neil J., Bruckbauer, Jochen, Breig, Benjamin, Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Martin, Robert W., Forgan, Ross S. and Skabara, Peter J. 2019. Implementing fluorescent MOFs as down-converting layers in hybrid light-emitting diodes. Journal of Materials Chemistry. C 7 (8) , pp. 2394-2400. 10.1039/C9TC00067D
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Yi, Lok, Frentrup, Martin, Kappers, Menno, Oliver, Rachel, Humphreys, Colin and Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583 2018. Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN. Journal of Applied Physics 124 , 105302.
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Choi, F. S., Griffiths, J. T., Ren, Chris, Lee, K. B., Zaidi, Z. H., Houston, P. A., Guiney, I., Humphreys, C. J., Oliver, R. A. and Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583 2018. Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers. Journal of Applied Physics 124 (5) , 055702. 10.1063/1.5027680
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Roff, Chris, Bennedikt, J., Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830, Wallis, D.J. ORCID: https://orcid.org/0000-0002-0475-7583, Hilton, K.P., Maclean, J.O., Hayes, D.G., Uren, M. J. and Martin, T. 2018. Utilization of waveform measurements for degradation analysis of AlGaN/GaN HFETs. Presented at: ARFTG 70th Microwave Measurement Symposium, Tempe, AZ, USA, 27-30 November 2007. 2007 70th ARFTG Microwave Measurement Conference (ARFTG). IEEE, 10.1109/ARFTG.2007.8376173

Zaidi, Z. H., Lee, K. B., Roberts, J. W., Guiney, I., Qian, H., Jiang, S., Cheong, J. S., Li, P., Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583, Humphreys, C. J., Chalker, P. R. and Houston, P. A. 2018. Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics 123 (18) , 184503. 10.1063/1.5027822
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Church, S. A., Hammersley, S., Mitchell, P. W., Kappers, M. J., Lee, L. Y., Massabuau, F., Sahonta, S. L., Frentrup, M., Shaw, L. J., Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583, Humphreys, C. J., Oliver, R. A., Binks, D. J. and Dawson, P. 2018. Effect of stacking faults on the photoluminescence spectrum of zincblende GaN. Journal of Applied Physics 123 (18) , 185705. 10.1063/1.5026267
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Tang, Fengzai, Lee, Kean B., Guiney, Ivor, Frentrup, Martin, Barnard, Jonathan S., Divitini, Giorgio, Zaidi, Zaffar H., Martin, Tomas L., Bagot, Paul A., Moody, Michael P., Humphreys, Colin J., Houston, Peter A., Oliver, Rachel A. and Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583 2018. Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. Journal of Applied Physics 123 (2) , 024902. 10.1063/1.5006255
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Jiang, Sheng, Lee, Kean Boon, Guiney, Ivor, Miaja, Pablo F., Zaidi, Zaffar H., Qian, Hongtu, Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Forsyth, Andrew J., Humphreys, Colin J. and Houston, Peter A. 2017. All-GaN-integrated cascode heterojunction field effect transistors. IEEE Transactions on Power Electronics 32 (11) , pp. 8743-8750. 10.1109/TPEL.2016.2643499
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Mandal, Soumen ORCID: https://orcid.org/0000-0001-8912-1439, Thomas, Evan L. H., Middleton, Callum, Gines, Laia ORCID: https://orcid.org/0000-0001-9980-054X, Griffiths, James T., Kappers, Menno J., Oliver, Rachel A., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Goff, Lucy E., Lynch, Stephen A. ORCID: https://orcid.org/0000-0001-9818-2284, Kuball, Martin and Williams, Oliver A. ORCID: https://orcid.org/0000-0002-7210-3004 2017. Surface zeta potential and diamond seeding on gallium nitride films. ACS Omega 2 (10) , pp. 7275-7280. 10.1021/acsomega.7b01069
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Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Benakaprasad, Bhavana, Li, Xu, Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Guiney, Ivor, Humphreys, Colin and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2017. Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC). Presented at: 18th International Radar Symposium (IRS), 2017, Prague, Czech Republic, 28-30 June 2017. Radar Symposium Conference Proceedings. pp. 1-7. 10.23919/IRS.2017.8008166

Rae, K., Foucher, C., Guilhabert, B., Islim, M. S., Yin, L., Zhu, D., Oliver, R. A., Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583, Haas, H., Laurand, N. and Dawson, M. D. 2017. InGaN µLEDs integrated onto colloidal quantum dot functionalized ultra-thin glass. Optics Express 25 (16) , pp. 19179-19184. 10.1364/OE.25.019179
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Benakaprasad, Bhavana, Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Li, X., Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Guiney, I. and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2017. Design and performance comparison of various terahertz microstrip antennas on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (APMC), Asia-Pacific, New Delhi, India, 5-9 Dec 2016. Proceedings of the Asia-Pacific Microwave Conference 2016. IEEE, 10.1109/APMC.2016.7931368

Eblabla, Abdalla Mohamed ORCID: https://orcid.org/0000-0002-5991-892X, Li, Xu, Wallis, David J ORCID: https://orcid.org/0000-0002-0475-7583, Guiney, Ivor and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2017. GaN on low-resistivity silicon THz high-Q passive device technology. IEEE Transactions on Terahertz Science & Technology 7 (1) , pp. 93-97. 10.1109/TTHZ.2016.2618751
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Benakaprasad, Bhavana, Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Li, X., Thayne, I., Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Guiney, I., Humphreys, C. and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2016. Terahertz monolithic integrated circuits (TMICs) array antenna technology on GaN-on-Low resistivity silicon substrates. Presented at: 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),, Copenhagen, Denmark, 25-30 Sep 2016. 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),. IEEE, 10.1109/IRMMW-THz.2016.7758488

Jamil, Shahid, Gammon, Tammy, Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583 and Fontaine, Michael D. 2016. Standby person for electrical tasks and rescue guidelines for electrical incident victims. Presented at: Petroleum and Chemical Industry Technical Conference (PCIC), Philadelphia, PA, USA, 19-22 Sep 2016. IEEE, 10.1109/PCICON.2016.7589220

Chatterjee, I., Uren, M. J., Pooth, A., Karboyan, S., Martin-Horcajo, S., Kuball, M., Lee, K. B., Zaidi, Z., Houston, P. A., Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Guiney, I. and Humphreys, C. J. 2016. Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs. Presented at: 2016 IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA, 17-21 April 2016. 2016 IEEE International Reliability Physics Symposium (IRPS). IEEE, 4A41-4A45. 10.1109/IRPS.2016.7574529

Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583 2016. The hazards of risk assessment. Presented at: Electrical Safety Workshop (ESW), Jacksonville, FL, USA, 6-11 March 2016. 10.1109/ESW.2016.7499706

Waller, William M., Uren, Michael J., Lee, Kean Boon, Houston, Peter A., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Guiney, Ivor, Humphreys, Colin J., Pandey, Saurabh, Sonsky, Jan and Kuball, Martin 2016. Subthreshold Mobility in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices 63 (5) , pp. 1861-1865. 10.1109/TED.2016.2542588

Miaja, Pablo F., Jiang, Sheng, Lee, Kean Boon, Guiney, Ivor, Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Humphreys, Colin J., Houston, Peter A. and Forsyth, Andrew J. 2016. Modelling the closely-coupled cascode switching process. Presented at: 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, 18-22 September 2016. 2016 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 10.1109/ECCE.2016.7855268

Benakaprasad, Bhavana, Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Li, X, Thayne, I, Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Guiney, I, Humphreys, C and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2016. Terahertz microstrip single patch antenna technology on GaN-on-Low resistivity silicon substrates for TMIC. Presented at: IET Colloquium on Antennas, Wireless and Electromagnetics, Glasgow, UK, 26 May 2016.

Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097, Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Benakaprasad, Bhavana, Li, X, Thayne, I, Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Guiney, I and Humphreys, C 2016. MMIC-compatible microstrip technology for GaN-HEMTs on low resistivity silicon substrate. Presented at: International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016.

Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Li, X, Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Benakaprasad, Bhavana, Guiney, I and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2016. High frequency active and passives devices using GaN on low resistivity silicon. Presented at: ARMMS RF & Microwave Society Conference, Milton Common Nr Thame, UK, 18-19 Apr 2016.

Eblabla, A. ORCID: https://orcid.org/0000-0002-5991-892X, Li, X, Thayne, I., Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583, Guiney, I. and Elgaid, K. ORCID: https://orcid.org/0000-0003-3265-1097 2015. High performance GaN high electron mobility transistors on low resistivity silicon for X -Band Applications. IEEE Electron Device Letters 36 (9) , pp. 899-901. 10.1109/LED.2015.2460120

Waller, William M., Karboyan, Serge, Uren, Michael J., Lee, Kean Boon, Houston, Peter A., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Guiney, Ivor, Humphreys, Colin J. and Kuball, Martin 2015. Interface state artefact in long gate-length AlGaN/GaN HEMTs. IEEE Transactions of Electron Devices 62 (8) , pp. 2464-2469. 10.1109/TED.2015.2444911

Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Guiney, I. and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2015. Novel shielded coplanar waveguides on GaN-on-Low resistivity Si substrates for MMIC applications. IEEE Microwave and Wireless Components Letters 25 (7) , pp. 427-429. 10.1109/LMWC.2015.2429120

Ashley, T., Emeny, M. T., Hayes, D. G., Hilton, K. P., Jefferies, R., Maclean, J. O., Smith, S. J., Tang, A. W-H, Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583 and Webber, P. J. 2010. High-performance InSb based quantum well field effect transistors for low-power dissipation applications. Presented at: 2009 IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, USA, 7-9 December 2009. 2009 IEEE International Electron Devices Meeting (IEDM). IEEE, p. 1. 10.1109/IEDM.2009.5424207

Janssen, Jochem, Hilton, Keith P., Maclean, Jessica O., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Powell, Jeff, Uren, Michael, Martin, Trevor, van Heijningen, Marc and van Vliet, Frank 2009. X-Band GaN SPDT MMIC with over 25 watt linear power handling. Presented at: European Microwave Integrated Circuit Conference, 2008, Amsterdam, The Netherlands, 27-28 October 2009. 2008 European Microwave Integrated Circuit Conference. IEEE, 10.1109/EMICC.2008.4772261

Riedel, G. J., Pomeroy, J. W., Hilton, K.P., Maclean, J.O., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Uren, M.J., Martin, T., Forsberg, U., Lundskog, A., Kakanakova-Georgieva, A., Pozina, G., Janzen, E., Lossy, R., Pazirandeh, R., Brunner, F., Wurfl, J. and Kuball, M. 2009. Reducing thermal resistance of AlGaN/GaN electronic devices using novel nucleation layers. IEEE Electron Device Letters 30 (2) , pp. 103-106. 10.1109/LED.2008.2010340

Riedel, G.J., Pomeroy, J.W., Hilton, K.P., Maclean, J.O., Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Uren, M.J., Martin, T. and Kuball, M. 2008. Nanosecond timescale thermal dynamics of AlGaN/GaN electronic devices. IEEE Electron Device Letters 29 (5) , pp. 416-418. 10.1109/LED.2008.919779

Radosavljevic, M., Ashley, T., Andreev, A., Coomber, S. D., Dewey, G., Emeny, M. T., Fearn, M., Hayes, D. G., Hilton, K. P., Hudait, M. K., Jefferies, R., Martin, T., Pillarisetty, R., Rachmady, W., Rakshit, T., Smith, S. J., Uren, M. J., Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583, Wilding, P. J. and Chau, Robert 2008. High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications. Presented at: IEEE International Electron Devices Meeting, San Francisco, CA, 15-17 Dec 2008. 10.1109/IEDM.2008.4796798

Sarua, Andrei, Ji, Hangfeng, Hilton, K. P., Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Uren, Michael J., Martin, T and Kuball, Martin 2007. Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices. IEEE Transactions of Electron Devices 54 (12) , pp. 3152-3158. 10.1109/TED.2007.908874

Ashley, T., Buckle, L., Emeny, M., Fearn, M., Hayes, D., Hilton, K., Jefferies, R., Martin, T., Nash, K., Phillips, T., Powell, J., A. Tang, W., Uren, M., Wallis, D. ORCID: https://orcid.org/0000-0002-0475-7583, Wilding, P., Datta, S. and Chau, R. 2007. Indium antimonide based quantum well FETs for ultra-high speed electronics. Presented at: 64th Device Research Conference, State College, PA, 26-28 June 2006. Device Research Conference, 64th. p. 201. 10.1109/DRC.2006.305056

Kuball, M., Riedel, G. J., Pomeroy, J. W., Sarua, A., Uren, M. J., Martin, T., Hilton, K. P., Maclean, J. O. and Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583 2007. Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-raman spectroscopy. IEEE Electron Device Letters 28 (2) , pp. 86-89. 10.1109/LED.2006.889215

Ashley, T., Buckle, L., Datta, S., Emeny, M. T., Hayes, D. G., Hilton, K. P., Jefferies, R., Martin, T., Phillips, T. J., Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Wilding, P. J. and Chau, R. 2007. Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications. Electronics letters 43 (14) , 777. 10.1049/el:20071335

Ashley, T., Buckle, L., Emeny, M., Fearn, M., Hayes, D., Hilton, K., Jefferies, R., Martin, T., Phillips, T., Powell, J., Tang, A., Wallis, D. ORCID: https://orcid.org/0000-0002-0475-7583 and Wilding, P. 2006. Indium antimonide based technology for RF applications. Presented at: Compound Semiconductor Integrated Circuit Symposium, San Antonio, TX, 12-15 Nov 2006. 10.1109/CSICS.2006.319918

Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583 2006. Class F at class B temperatures is it time for a change? Presented at: Conference Record of the 2006 IEEE International Symposium on Electrical Insulation, 2006, Toronto, Ont., Canada, 11-14 June 2006. 10.1109/ELINSL.2006.1665243

Uren, M, Hayes, D, Balmer, R, Wallis, D ORCID: https://orcid.org/0000-0002-0475-7583, Hilton, K, Maclean, J, Martin, T, Roff, C, McGovern, P, Benedikt, J ORCID: https://orcid.org/0000-0002-9583-2349 and Tasker, P ORCID: https://orcid.org/0000-0002-6760-7830 2006. Control of Short-Channel Effects in GaN/AlGaN HFETs. Presented at: 1st European Microwave Integrated Circuits Conference, Manchester, UK, 10-13 Sept 2006. 2006 European Microwave Integrated Circuits Conference. IEEE, p. 65. 10.1109/EMICC.2006.282751

Datta, S., Ashley, T., Brask, J., Buckle, L., Doczy, M., Emeny, M., Hayes, D., Hilton, K., Jefferies, R., Martin, T., Phillips, T.J., Wallis, D. ORCID: https://orcid.org/0000-0002-0475-7583, Wilding, P. and Chau, R. 2005. 85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications. Presented at: IEEE International Electron Devices Meeting, Washington DC, 5 Dec 2005. Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. IEEE, 10.1109/IEDM.2005.1609466

Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Keir, A.M., Emeny, M.T. and Martin, T. 2001. Measurement of III-V quaternary composition using X-ray diffraction. IEE Proceedings Optoelectronics 148 (2) , pp. 97-100. 10.1049/ip-opt:20010442

Wallis, David ORCID: https://orcid.org/0000-0002-0475-7583, Watson, Alan and Mo, Ning 1996. Cardiac neurones of automatic ganglia. Microscopy Research and Technique 35 (1) , pp. 69-79. 10.1002/(SICI)1097-0029(19960901)35:1<69::AID-JEMT6>3.0.CO;2-N

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