Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes

Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097, Li, Xu, Williamson, F., McLelland, H., Ferguson, S.M., Holland, M.C., Beaumont, S.P. and Thayne, I.G. 1999. Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes. Electronics letters 35 (19) , pp. 1678-1679. 10.1049/el:19991104

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Abstract

The authors show that in a GaAs HEMT-based monolithic millimetre-wave integrated circuit process flow, prior to gate metallisation the introduction of a hydrofluoric acid cleaning process after gate recess etching results in a significant reduction in the Schottky diode turn-on voltage, series resistance and bias dependent RF junction resistance

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	Institution of Engineering & Technology
ISSN:	0013-5194
Last Modified:	23 Oct 2022 13:03
URI:	https://orca.cardiff.ac.uk/id/eprint/109550

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