Shi, Bei, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 and Lau, Kei May 2018. Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters. Journal of Applied Physics 123 (19) , 193104. 10.1063/1.5029255 |
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Official URL: http://dx.doi.org/10.1063/1.5029255
Item Type: | Article |
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Date Type: | Published Online |
Status: | Published |
Schools: | Physics and Astronomy |
Publisher: | American Institute of Physics |
ISSN: | 0021-8979 |
Date of First Compliant Deposit: | 23 May 2018 |
Date of Acceptance: | 2 May 2018 |
Last Modified: | 16 Nov 2024 04:30 |
URI: | https://orca.cardiff.ac.uk/id/eprint/111693 |
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