Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

Shi, Bei, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 and Lau, Kei May 2018. Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters. Journal of Applied Physics 123 (19) , 193104. 10.1063/1.5029255

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Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	American Institute of Physics
ISSN:	0021-8979
Date of First Compliant Deposit:	23 May 2018
Date of Acceptance:	2 May 2018
Last Modified:	16 Nov 2024 04:30
URI:	https://orca.cardiff.ac.uk/id/eprint/111693

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