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Photoluminescence as a probe of semiconductor surfaces: CdTe and CdS

Sobiesierski, Zbigniew, Dharmadasa, I. M. and Williams, R. H. 1990. Photoluminescence as a probe of semiconductor surfaces: CdTe and CdS. Journal of Crystal Growth 101 (1-4) , pp. 599-602. 10.1016/0022-0248(90)91044-Q

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Photoluminescence (PL) measurements have been performed on both single crystal and polycrystalline CdTe samples which have been chemically treated. The relative intensities of the 0.87 eV and 1.125 eV PL transitions (T = 4 K) are ssen to be linked to the preferential depletion of either Cd or Te from the CdTe surface. The energies of these deep level transitions agree well with the two values of Schottky barrier, φb = 0.75 ± .02 eV and φb = 0.93 ± .02 eV, normally obtained at room temperature for Au and Sb contacts to chemically etched n-CdTe. A much lower PL intensity is observed from the Cd-deficient surfaces than from the more stoichiometric or slightly Te-deficient surfaces. This can be ascribed to variations in surface Fermi level position, resulting in higher surface recombination velocities for Fermi level positions closer to the middle of the bandgap. Similar measurements have been carried out on crystals of n-CdS which have either been chemically treated or heated in a nitrogen atmosphere.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Lifelong Learning
Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Elsevier
ISSN: 0022-0248
Last Modified: 04 Jun 2017 02:35

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