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Number of items: 47.

Westwood, David I., Sobiesierski, Zbigniew and Matthai, Clarence Cherian 1999. The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects. Applied Surface Science 144-45 , pp. 484-487. 10.1016/S0169-4332(98)00845-9

Quagliano, L. G., Sobiesierski, Zbigniew, Orani, D. and Ricci, A. 1999. Phonon study of temperature evolution of strain in GaAs/Si(0 0 1) and GaAs/Si(1 1 1) heterostructures. Physica B: Condensed Matter 263-64 , pp. 775-778. 10.1016/S0921-4526(98)01460-4

Parbrook, P. J., Ozanyan, K. B., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Zbigniew and Westwood, David I. 1998. Optical monitoring of InP monolayer growth rates. Applied Physics Letters 73 (3) , pp. 345-347. 10.1063/1.121829

Westwood, David I., Sobiesierski, Zbigniew, Matthai, Clarence Cherian, Steimetz, E., Zettler, T. and Richter, W. 1998. Processes of quantum dot formation in the InAs on GaAs(001) system: A reflectance anisotropy spectroscopy study. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16 (4) , pp. 2358-2366. 10.1116/1.590175

Sobiesierski, Zbigniew and Westwood, David I. 1998. Reflectance anisotropy spectroscopy and the growth of low-dimensional materials. Thin Solid Films 318 (1-2) , pp. 140-147. 10.1016/S0040-6090(97)01153-X

Sobiesierski, Zbigniew, Westwood, David I. and Matthai, Clarence Cherian 1998. Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces. Journal of Physics: Condensed Matter 10 (1) , pp. 1-43. 10.1088/0953-8984/10/1/005

Westwood, David I., Sobiesierski, Zbigniew, Steimetz, E., Zettler, T. and Richter, W. 1998. On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films. Applied Surface Science 123-24 , pp. 347-351. 10.1016/S0169-4332(97)00525-4

Parbrook, P. J., Ozanyan, K. B., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Zbigniew and Westwood, David I. 1998. Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy. Applied Surface Science 123-24 , pp. 313-318. 10.1016/S0169-4332(97)00454-6

Sobiesierski, Zbigniew, Westwood, David I. and Elliott, Martin

1997. Reflectance anisotropy spectra from Si δ-doped GaAs(001): Correlation of linear electro-optic effect with integrated surface field. Physical Review B: Condensed Matter and Materials Physics 56 (23) , pp. 15277-15281. 10.1103/PhysRevB.56.15277

Ozanyan, K. B., Parbrook, P. J., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Zbigniew and Westwood, David I. 1997. In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy. Journal of Applied Physics 82 (1) , pp. 474-476. 10.1063/1.365585

Sobiesierski, Zbigniew, Westwood, David I., Parbrook, P. J., Ozanyan, K. B., Hopkinson, M. and Whitehouse, C. R. 1997. As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy. Applied Physics Letters 70 (11) , pp. 1423-1425. 10.1063/1.118595

Sobiesierski, Zbigniew, Westwood, David I. and Woolf, D.A. 1996. Reflectance anisotropy spectroscopy study of GaAs overlayer growth on submonolayer coverages of Si on the GaAs(001)-c(4x4) surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14 (4) , pp. 3065-3069. 10.1116/1.589065

Steimetz, E., Zettler, J. T., Richter, W., Westwood, David I., Woolf, D. A. and Sobiesierski, Zbigniew 1996. Optical monitoring of the development of InAs quantum dots on GaAs(001) by reflectance anisotropy spectroscopy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14 (4) , pp. 3058-3064. 10.1116/1.589064

Lees, A. K., Zhang, J., Sobiesierski, Zbigniew, Taylor, A. G., Xie, M. H., Joyce, B. and Westwood, David I. 1996. New hydrogen desorption kinetics from vicinal Si(001) surfaces as observed by reflectance anisotropy. Presented at: 23rd International Conference on the Physics of Semiconductors, Berlin, Germany, 21-26 July 1996. Published in: Scheffler, M. and Zimmermann, R. eds. The Physics of Semiconductors: Proceedings of the 23rd International Conference on the Physics of Semiconductors, ICPS, Berlin, 21-26 July 1996. , vol.2 Singapore: World Scientific Publishing, pp. 955-958.

Steimetz, E., Schienle, F., Zettler, J. T., Richter, W., Westwood, D., Sobiesierski, Zbigniew (LEARN), Matthai, Clarence Cherian, Junno, B., Miller, M. and Samuelson, L. 1996. In-Situ Control of InAs Quantum Dot Evolution in MBE, MOVPE and MOMBE. Presented at: 23rd International conference on the physics of semiconductors., Berliin, Germany, 21-26 July 1996. Published in: Lockwoood, David J., Scheffler, M. and Zimmermann, R. eds. 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21-26, 1996 (Proceedings). (3800) World Scientific, 1297 -1300.

Sobiesierski, Zbigniew 1995. Application of photoluminescence spectroscopy to semiconductor surfaces and interfaces. McGilp, J. F., Weaire, D. and Patterson, C., eds. Epioptics: Linear and Nonlinear Optical Spectroscopy of Surfaces and Interfaces, ESPRIT Basic Research Series, Berlin: Springer, pp. 133-162.

Williams, J. P., Westwood, David I., Sobiesierski, Zbigniew and Aubrey, J. E. 1994. Growth optimization of n‐type GaAs on GaAs(201) substrates. Journal of Applied Physics 76 (1) , pp. 612-614. 10.1063/1.357056

Sobiesierski, Zbigniew and Clegg, J. B. 1993. Evidence for hydrogen accumulation at strained layer heterojunctions. Applied Physics Letters 63 (7) , pp. 926-928. 10.1063/1.110775

Sobiesierski, Zbigniew, Westwood, David I., Woolf, D. A., Fukui, T. and Hasegawa, H. 1993. Photoluminescence spectroscopy of near‐surface quantum wells: Electronic coupling between quantized energy levels and the sample surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 11 (4) , pp. 1723-1726. 10.1116/1.586469

Woolf, D. A., Williams, J. P., Westwood, David I., Sobiesierski, Zbigniew, Aubrey, J. E. and Williams, R. H. 1993. The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies. Journal of Crystal Growth 127 (1-4) , pp. 913-917. 10.1016/0022-0248(93)90759-P

Quagliano, L. G. and Sobiesierski, Zbigniew 1993. Raman scattering as a probe of the tensile strain distribution in GaAs grown on Si(111) by molecular beam epitaxy. Superlattices and Microstructures 13 (1) , pp. 105-108. 10.1006/spmi.1993.1021

Capizzi, M., Coluzza, C., Emiliani, V., Frankl, P., Frova, A., Sarto, F., Bonapasta, A. A., Sobiesierski, Zbigniew and Sacks, R. N. 1992. Hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells. Journal of Applied Physics 72 (4) , pp. 1454-1459. 10.1063/1.351707

Sobiesierski, Zbigniew, Woolf, D. A., Frova, A. and Phillips, R. T. 1992. Photoluminescence and photoluminescence excitation spectroscopy of H‐related defects in strained InxGa1−xAs/GaAs(100) quantum wells. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 10 (4) , pp. 1975-1979. 10.1116/1.586169

Woolf, D. A., Sobiesierski, Zbigniew, Westwood, David I. and Williams, R. H. 1992. The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies. Journal of Applied Physics 71 (10) , pp. 4908-4915. 10.1063/1.350638

Sobiesierski, Zbigniew, Clark, S. A. and Williams, R. H. 1992. Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Surface Science 56-58 (2) , pp. 703-707. 10.1016/0169-4332(92)90325-R

Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I., Frova, A. and Coluzza, C. 1992. Creation of radiative hydrogen-related states within strained InxGa1-xAs/GaAs quantum wells by hydrogenation. Solid State Communications 81 (1) , pp. 125-128. 10.1016/0038-1098(92)90585-W

Sobiesierski, Zbigniew and Westwood, David I. 1992. Coupling between near-surface Inx Ga1−x As / GaAs(100) quantum wells and the sample surface. Superlattices and Microstructures 12 (2) , pp. 267-271. 10.1016/0749-6036(92)90350-E

Sobiesierski, Zbigniew, Woolf, D. A. and Westwood, David I. 1992. Incorporation of H into Inx Ga1−x As / GaAs quantum wells: Optical spectroscopy of H-related radiative states. Superlattices and Microstructures 12 (2) , pp. 261-265. 10.1016/0749-6036(92)90349-A

Williams, P., Westwood, David I., Sobiesierski, Zbigniew and Aubrey, E. 1992. The molecular beam epitaxial growth of GAAS/GAAS(201): doping and growth temperature studies. Presented at: 21st International Conference on the Physics of Semiconductors, Beijing, China, 10-14 August 1992. Published in: Jiang, P. and Zheng, H.-Z. eds. Proceedings of the 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992. Singapore: World Scientific Publishing,

Sobiesierski, Zbigniew, Clark, S. A., Williams, R. H., Tabata, A., Benyattou, T., Guillot, G., Gendry, M., Hollinger, G. and Viktorovitch, P. 1991. Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy. Applied Physics Letters 58 (17) , pp. 1863-1865. 10.1063/1.105055

Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1991. Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy. Applied Physics Letters 58 (6) , pp. 628-630. 10.1063/1.104550

Tabata, A., Benyattou, T., Guillot, G., Sobiesierski, Zbigniew, Clark, S. A., Williams, R. H., Gendry, M., Hollinger, G. and Viktorovitch, P. 1991. Surface InAs/InP quantum wells: epitaxial growth and characterization. Presented at: 3rd International Conference on Indium Phosphide and Related Materials, Cardiff, UK, 8-11 April 1991. Indium Phosphide and Related Materials, 3rd International Conference, Cardiff, UK, 8-11 Apr 1991. INDIUM PHOSPHIDE AND RELATED MATERIALS : THIRD INTERNATIONAL CONFERENCE, VOLS 1 AND 2. New York: IEEE, pp. 496-499. 10.1109/ICIPRM.1991.147421

Wolverson, D., Sobiesierski, Zbigniew and Phillips, R. T. 1990. The dependence of CW photoluminescence on excitation energy in a-P. Journal of Physics: Condensed Matter 2 (30) , pp. 6433-6437. 10.1088/0953-8984/2/30/008

Sobiesierski, Zbigniew, Forsyth, N. M., Dharmadasa, I. M. and Williams, R. H. 1990. Use of x-ray photoelectron spectroscopy to investigate the deposition of metaloverlayers onto the clean cleaved CdS surface. Surface Science 231 (1-2) , pp. 98-102. 10.1016/0039-6028(90)90697-7

Sobiesierski, Zbigniew, Dharmadasa, I. M. and Williams, R. H. 1990. Photoluminescence as a probe of semiconductor surfaces: CdTe and CdS. Journal of Crystal Growth 101 (1-4) , pp. 599-602. 10.1016/0022-0248(90)91044-Q

Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1990. Characterization of GaAs buffer layers 0.1 μm thick grown on Si(100). Materials Science and Engineering: B 5 (2) , pp. 275-278. 10.1016/0921-5107(90)90068-M

Sobiesierski, Zbigniew, Westwood, David I. and Williams, R. H. 1990. Raman scattering from InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy. Materials Science and Engineering: B 5 (2) , pp. 265-268. 10.1016/0921-5107(90)90066-K

Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1990. Variation of strain in single and multilayer (InxGa1−xAs) structures grown on Si(100), and Si(111), by molecular beam epitaxy. Superlattices and Microstructures 7 (4) , pp. 419-421. 10.1016/0749-6036(90)90237-2

Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1990. Photoluminescence measurements for GaAS grown on SI(100) and SI(111) by molecular-beam epitaxy. Presented at: 20th International Conference on the Physics of Semiconductors, Thessaloniki, Greece, 6-10 August 1990. Published in: Joannopoulos, John D. and Anastassakis, E. eds. 20th International Conference on the Physics of Semiconductors (ICPS), Thessaloniki, Greece, Aug. 6-10 1990. 20TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, VOLS 1-3. London: World Scientific Publishing, pp. 1081-1084.

Williams, R. H., Forsyth, N. M., Dharmadasa, I. M. and Sobiesierski, Zbigniew 1989. Metal contacts to II-VI semiconductors: CdS and CdTe. Applied Surface Science 41-2 , pp. 189-194. 10.1016/0169-4332(89)90055-X

Forsyth, N. M., Dharmadasa, I. M., Sobiesierski, Zbigniew and Williams, R. H. 1989. Schottky barriers to CdS and their importance in Schottky barrier theories. Semiconductor Science and Technology 4 (1) , pp. 57-59. 10.1088/0268-1242/4/1/011

Sobiesierski, Zbigniew, Dharmadasa, I. M. and Williams, R. H. 1988. Correlation of photoluminescence measurements with the composition and electronic properties of chemically etched CdTe surfaces. Applied Physics Letters 53 (26) , pp. 2623-2625. 10.1063/1.100178

Forsyth, N. M., Dharmadasa, I. M., Sobiesierski, Zbigniew and Williams, R. H. 1988. An investigation of metal contacts to II–VI compounds: CdTe and CdS. Vacuum 38 (4-5) , pp. 369-371. 10.1016/0042-207X(88)90081-4

Phillips, R. T. and Sobiesierski, Zbigniew 1987. Recombination in amorphous red phosphorus. Journal of Physics C: Solid State Physics 20 (27) , pp. 4259-4269. 10.1088/0022-3719/20/27/006

Phillips, R. T., Sobiesierski, Zbigniew, Toner, W. T., Barr, J. R. M. and Langley, A. J. 1987. Initial photoluminescence decay rates in amorphous phosphorus. Solid State Communications 63 (6) , pp. 481-484. 10.1016/0038-1098(87)90275-4

Sobiesierski, Zbigniew and Phillips, R. T. 1987. Time-resolved photoluminescence in amorphous phosphorus. Journal of Non-Crystalline Solids 90 (1-3) , pp. 457-460. 10.1016/S0022-3093(87)80463-5

Sobiesierski, Zbigniew and Phillips, R. T. 1986. A time-resolved photoluminescence study of amorphous phosphorus. Solid State Communications 60 (1) , pp. 25-29. 10.1016/0038-1098(86)90008-6

This list was generated on Tue Oct 15 07:34:20 2024 BST.