High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

Bhasker, H. P., Dhar, S., Sain, A., Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806 and Shivaprasad, S. M. 2012. High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy. Applied Physics Letters 101 (13) , p. 132109. 10.1063/1.4755775

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Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	AIP Publishing
ISSN:	0003-6951
Date of Acceptance:	1 September 2012
Last Modified:	24 Oct 2022 07:39
URI:	https://orca.cardiff.ac.uk/id/eprint/115544

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