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Number of items: 40.

Gillies, R., McKay, K., Asku, K., Srivastava, V., Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806 and Sandall, I. 2025. Exploring the use of low-temperature atmospheric plasma polymerization for the reduction of parasitic currents in type-II superlattice devices. Plasma Physics and Controlled Fusion 67 (2) , 025012. 10.1088/1361-6587/ada1fa
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Cao, Peng, Peng, Hongling, Wang, Tiancai, Srivastava, Vibha, Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, You, Minghui, Zhuang, Qiandong and Zheng, Wanhua 2023. Surface passivation of random alloy AlGaAsSb avalanche photodiode. Electronics Letters 59 (18) , e12956. 10.1049/ell2.12956
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Alshahrani, Dhafer, Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Jiménez, Juan J., Kwan, Dominic, Srivastava, Vibha, Delmas, Marie ORCID: https://orcid.org/0000-0002-5895-1146, Morales, Francisco M., Liang, Baolai and Huffaker, Diana ORCID: https://orcid.org/0000-0001-5946-4481 2023. Effect of interfacial schemes on the optical and structural properties of InAs/GaSb type-ii superlattices. ACS Applied Materials and Interfaces 15 (6) , pp. 8624-8635. 10.1021/acsami.2c19292
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Kwan, D. C. M., Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, Jiménez, J. J., Srivastava, V., Delmas, M. ORCID: https://orcid.org/0000-0002-5895-1146, Liang, B. L., Morales, F. M. and Huffaker, D. L. ORCID: https://orcid.org/0000-0001-5946-4481 2022. Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform. Scientific Reports 12 (1) , 11616. 10.1038/s41598-022-15538-3
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Alshahrani, Dhafer O., Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Anyebe, Ezekiel A. ORCID: https://orcid.org/0000-0001-6642-9334, Srivastava, V. and Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481 2022. Emerging type-II superlattices of InAs/InAsSb and InAs/GaSb for mid-wavelength infrared photodetectors. Advanced Photonics Research 3 (2) , 2100094. 10.1002/adpr.202100094
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Kwan, Dominic, Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Anyebe, Ezekiel ORCID: https://orcid.org/0000-0001-6642-9334 and Huffaker, Diana ORCID: https://orcid.org/0000-0001-5946-4481 2021. Recent trends in 8-14 µm type-II superlattice infrared detectors. Infrared Physics and Technology 116 , 103756. 10.1016/j.infrared.2021.103756
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Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, Alshahrani, D., Kwan, D., Anyebe, E. ORCID: https://orcid.org/0000-0001-6642-9334 and Srivastava, V. 2021. Optical and electrical performance of 5 µm InAs/GaSb Type-II superlattice for NOx sensing application. Materials Research Bulletin 142 , 111424. 10.1016/j.materresbull.2021.111424
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Kwan, D. C. M., Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, Anyebe, E. A. ORCID: https://orcid.org/0000-0001-6642-9334, Alshahrani, D. O., Delmas, M. ORCID: https://orcid.org/0000-0002-5895-1146, Liang, B. L. and Huffaker, D. L. ORCID: https://orcid.org/0000-0001-5946-4481 2021. Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs. Applied Physics Letters 118 (20) , 203102. 10.1063/5.0045703
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Ahmed, Jamal, Xie, Shiyu ORCID: https://orcid.org/0000-0002-1994-5878, Liang, Baolai, Yi, Xin, Jin, Xiao, Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, David, John. P. R. and Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481 2021. Theoretical analysis of AlAs0.56Sb0.44 single photon avalanche diodes with high breakdown probability. IEEE Journal of Quantum Electronics 57 (2) , 4500206. 10.1109/JQE.2021.3058356
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Anyebe, Ezekiel Anyebe ORCID: https://orcid.org/0000-0001-6642-9334 and Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806 2021. Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene. Nano Select 2 (4) , pp. 688-711. 10.1002/nano.202000142
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Anyebe, Ezekiel A. ORCID: https://orcid.org/0000-0001-6642-9334, Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Sanchez, A. M. and Zhuang, Qiandong 2020. A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE. Applied Physics A: Materials Science and Processing 126 (6) , 427. 10.1007/s00339-020-03609-z
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Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, Makarovsky, O., Krier, A. and Patanè, A. 2020. Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode. Applied Physics Letters 116 (14) , 142108. 10.1063/5.0002407
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Anyebe, E. A. ORCID: https://orcid.org/0000-0001-6642-9334 and Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806 2019. Photoluminescence characteristics of zinc blende InAs nanowires. Scientific Reports 9 , 17665. 10.1038/s41598-019-54047-8
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Sharpe, M. K., Marko, I. P., Duffy, D. A., England, J., Schneider, E., Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, Fedorov, V., Clarke, E., Tan, C. H. and Sweeney, S. J. 2019. A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques. Journal of Applied Physics 126 (12) , 125706. 10.1063/1.5109653
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Kumar, Praveen, Tuteja, Mohit, Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Waghmare, U. V. and Shivaprasad, S. M. 2018. Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface. Applied Physics Letters 101 (13) , p. 131605. 10.1063/1.4751986

Keen, J.A., Repiso, E, Lu, Qi, Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Marshall, A.R.J and Krier, A 2018. Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared. Infrared Physics & technology 93 , pp. 375-380. 10.1016/j.infrared.2018.08.001
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Paola, D.M.D, Velichko, A, Bomers, Mario, Balakrishnan, Nilanthy, Makarovsky, Oleg, Capizzi, Mario, Cerutti, Laurent, Baranov, A.N., Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Krier, A, Taliercio, Thierry and Patane, A 2018. Optical detection and spatial modulation of mid‐infrared surface plasmon polaritons in a highly doped semiconductor. Advanced Optical Materials 6 , pp. 1700492-1700499. 10.1002/adom.201700492
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Keen, J. A., Lane, D, Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Marshall, A. R. J and Krier, A. 2018. InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs. Journal of Physics D: Applied Physics 51 (7) , 075103-075112. 10.1088/1361-6463/aaa60e/meta
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Velichko, A.V., Kudrynskyi, Z. R., Di Paola, D. M., Makarovsky, O., Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, Krier, A, Sandall, I. C., Tan, C. H., Kovalyuk, Z. D. and Patane, A. 2016. Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters 109 (18) , 182115. 10.1063/1.4967381
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Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, de la Mare, M. and Krier, A. 2016. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE. Journal of Physics D: Applied Physics 49 (43) , 435107. 10.1088/0022-3727/49/43/435107
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Di Paola, D. M., Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, Makarovsky, O., Velichko, A., Evaes, L., Mori, N., Krier, A. and Patane, A. 2016. Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode. Scientific Reports 6 , 32039. 10.1038/srep32039
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Debnath, A., Gandhi, J. S., Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, Pillai, R., Starikov, D. and Bensaoula, A. 2016. Effect of N-2* and N on GaN nanocolumns grown on Si(111) by molecular beam epitaxy. Journal of Applied Physics 119 (10) , 104302. 10.1063/1.4943179
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Krier, A., Yin, M., Marshall, A. R. J., Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, Krier, S. E., McDougall, S., Meredith, W., Johnson, A. D., Inskip, J. and Scholes, A. 2015. Low bandgap mid-infrared thermophotovoltaic arrays based on InAs. Infrared Physics and Technology 73 , pp. 126-129. 10.1016/j.infrared.2015.09.011

Birindelli, S., Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, Giubertoni, D., Pettinari, G., Velichko, A. V., Zhuang, Q. D., Krier, A., Patane, A., Polimeni, A. and Capizzi, M. 2015. Peculiarities of the hydrogenated In(AsN) alloy. Semiconductor Science and Technology 30 (10) , 105030. 10.1088/0268-1242/30/10/105030

Wheatley, R., Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, Mawst, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. D. and Krier, A. 2015. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP. Applied Physics Letters 106 (23) , 232105. 10.1063/1.4922590

Bhasker, H. P., Thakur, Varun, Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Shivaprasad, S. M. and Dhar, S. 2015. Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy. AIP Conference Proceedings 1583 , pp. 252-258. 10.1063/1.4865647

Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, Birindelli, S., Velichko, A. V., Zhuang, Q. D., Patane, A., Capizzi, M. and Krier, A. 2015. In(AsN) mid-infrared emission enhanced by rapid thermal annealing. Infrared Physics and Technology 68 , pp. 138-142. 10.1016/j.infrared.2014.11.016

Anyebe, E. A. ORCID: https://orcid.org/0000-0001-6642-9334, Zhuang, Q., Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806 and Krier, A. 2014. The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy. Semiconductor Science and Technology 29 (8) , 085010. 10.1088/0268-1242/29/8/085010
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Lu, Q., Zhuang, Q., Marshall, A., Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, Beanland, R. and Krier, A. 2014. InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers. Semiconductor Science and Technology 29 (7) , 075011. 10.1088/0268-1242/29/7/075011

Negi, D.S., Loukya, B., Dileep, K., Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Kumar, N. and Datta, R. 2013. Characterization of structure and magnetism in Zn1-x(Cox/Mnx)O epitaxial thin films as a function of composition. Superlattices and Microstructures 63 , p. 289. 10.1016/j.spmi.2013.09.007

Thakur, Varun, Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806 and Shivaprasad, S.M. 2013. Enhanced band edge luminescence from stress and defect free GaN nanowall network morphology. Solid State Communications 171 , p. 8. 10.1016/j.ssc.2013.07.012

Shetty, Satish, Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Ghatak, Jay and Shivaprasad, S. M. 2013. The origin of shape, orientation, and structure of spontaneously formed wurtzite GaN nanorods on Cubic Si(001) surface. Crystal Growth and Design 13 (6) , p. 2407. 10.1021/cg4000928

Bhasker, H. P., Dhar, S., Sain, A., Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806 and Shivaprasad, S. M. 2012. High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy. Applied Physics Letters 101 (13) , p. 132109. 10.1063/1.4755775

Kumar, Praveen, Tangi, Malleswararao, Shetty, Satish, Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806 and Shivaprasad, S. M. 2012. Growth of aligned wurtzite GaN nanorods on Si(111): Role of silicon nitride intermediate layer. MRS Online Proceedings Library 1411 , pp. 57-62. 10.1557/opl.2012.760

Mittra, Joy, Abraham, Geogy Jiju, Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Bahl, Sumit, Gupta, Aman, Shivaprasad, Sonnada M., Viswanadham, Chebolu Subrahmanya, Kulkarni, Ulhas Digambar and Dey, Gautam Kumar 2012. Role of substrate temperature in the pulsed laser deposition of zirconium oxide thin film. Materials Science Forum 710 , pp. 757-761. 10.4028/www.scientific.net/MSF.710.757

Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Shetty, Satish and Shivaprasad, S. M. 2011. Evidence for dislocation induced spontaneous formation of GaN nanowalls and nanocolumns on bare C-plane sapphire. Crystal Growth and Design 11 (11) , pp. 4900-4903. 10.1021/cg200749w

Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Shetty, Satish, Cohen, P.I. and Shivaprasad, S.M. 2011. Transformation of c-oriented nanowall network to a flat morphology in GaN films on c-plane sapphire. Materials Research Bulletin 46 (11) , p. 1811. 10.1016/j.materresbull.2011.07.043

Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806 and Shivaprasad, S. M. 2011. Nitrogen flux induced GaN nanostructure nucleation at misfit dislocations on Al2O3(0001). Applied Physics Letters 99 (14) , p. 143105. 10.1063/1.3646391

Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Shetty, Satish and Shivaprasad, S.M. 2011. Spontaneous formation of GaN nanostructures by molecular beam epitaxy. Journal of Crystal Growth 326 (1) , pp. 191-194. 10.1016/j.jcrysgro.2011.01.095

Kesaria, Manoj ORCID: https://orcid.org/0000-0003-1664-0806, Kumar, Mahesh, Govind and Shivaprasad, S.M. 2009. Effect of Pb adatom flux rate on adlayer coverage for Stranski-Krastanov growth mode on Si(111)7×7 surface. Applied Surface Science 256 (2) , p. 576. 10.1016/j.apsusc.2009.08.064

This list was generated on Thu Oct 30 11:07:46 2025 GMT.


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