Degradation studies of InAs/GaAs QD lasers grown on Si

Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790, Allford, C. P. ORCID: https://orcid.org/0000-0002-3798-9014, Spinnler, C., Li, Z., Tang, M., Liu, H. and Smowton, P. M. ORCID: https://orcid.org/0000-0002-9105-4842 2018. Degradation studies of InAs/GaAs QD lasers grown on Si. Presented at: ISLC 2018: 26th In ternational Semiconductor Laser Conference, Santa Fe, NM, USA, 16-19 September 2018. 2018 IEEE International Semiconductor Laser Conference (ISLC). Piscataway, NJ: IEEE, pp. 85-86. 10.1109/ISLC.2018.8516178

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Abstract

Lowering the threshold gain of InAs quantum dot lasers grown on Silicon, significantly extends device lifetime. Measurements on degraded devices show increased optical mode loss is responsible for degradation and a consequent shortening of lasing wavelength.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	IEEE
ISBN:	978-1-5386-6486-5
ISSN:	1947-6981
Date of First Compliant Deposit:	21 February 2019
Last Modified:	27 Nov 2024 00:30
URI:	https://orca.cardiff.ac.uk/id/eprint/119642

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