Utilization of waveform measurements for degradation analysis of AlGaN/GaN HFETs

Roff, Chris, Bennedikt, J., Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830, Wallis, D.J. ORCID: https://orcid.org/0000-0002-0475-7583, Hilton, K.P., Maclean, J.O., Hayes, D.G., Uren, M. J. and Martin, T. 2018. Utilization of waveform measurements for degradation analysis of AlGaN/GaN HFETs. Presented at: ARFTG 70th Microwave Measurement Symposium, Tempe, AZ, USA, 27-30 November 2007. 2007 70th ARFTG Microwave Measurement Conference (ARFTG). IEEE, 10.1109/ARFTG.2007.8376173

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Abstract

This paper employs, for the first time, RF waveform engineering to monitor device degradation over an RF "burn in" period. Measured RF current and voltage waveforms are used to monitor the degradation effects seen in GaN HFET transistors during large signal CW RF stress testing. The technique provides extra information on device performance compared with standard RF performance measures, demonstrating clearly where on the output IV plane the degradation is occurring and allowing device designers advanced insight into the degradation mechanisms limiting RF performance.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	IEEE
ISBN:	978-1-5386-7295-2
Last Modified:	25 Oct 2022 13:38
URI:	https://orca.cardiff.ac.uk/id/eprint/120421

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