Characterization of gain and loss of In(Ga)As/GaAs quantum dot active region for high temperature operation

Le Boulbar, Emmanuel D., Jarvis, Lydia, Hayes, David ORCID: https://orcid.org/0000-0002-2303-1622, Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790, Li, Zhibo ORCID: https://orcid.org/0000-0002-6913-1426, Tang, Mingchu, Liu, Huiyun, Smowton, Peter M. ORCID: https://orcid.org/0000-0002-9105-4842 and Abadia, Nicolas 2019. Characterization of gain and loss of In(Ga)As/GaAs quantum dot active region for high temperature operation. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019.

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Item Type:	Conference or Workshop Item (Paper)
Status:	In Press
Schools:	Schools > Physics and Astronomy
Date of First Compliant Deposit:	1 July 2019
Date of Acceptance:	22 May 2019
Last Modified:	23 Oct 2025 13:45
URI:	https://orca.cardiff.ac.uk/id/eprint/123862

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