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Thick, adherent diamond films on AlN with low thermal barrier resistance

Mandal, Soumen, Yuan, Chao, Massabuau, Fabien, Pomeroy, James W., Cuenca, Jerome, Bland, Henry, Thomas, Evan, Wallis, David, Batten, Tim, Morgan, David, Oliver, Rachel, Kuball, Martin and Williams, Oliver A. 2019. Thick, adherent diamond films on AlN with low thermal barrier resistance. ACS Applied Materials and Interfaces 11 (43) , pp. 40826-40834. 10.1021/acsami.9b13869

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The growth of >100-μm-thick diamond layers adherent on aluminum nitride with low thermal boundary resistance between diamond and AlN is presented in this work. The thermal barrier resistance was found to be in the range of 16 m2·K/GW, which is a large improvement on the current state-of-the-art. While thick films failed to adhere on untreated AlN films, AlN films treated with hydrogen/nitrogen plasma retained the thick diamond layers. Clear differences in ζ-potential measurement confirm surface modification due to hydrogen/nitrogen plasma treatment. An increase in non-diamond carbon in the initial layers of diamond grown on pretreated AlN is seen by Raman spectroscopy. The presence of non-diamond carbon has minimal effect on the thermal barrier resistance. The surfaces studied with X-ray photoelectron spectroscopy revealed a clear distinction between pretreated and untreated samples. The surface aluminum goes from a nitrogen-rich environment to an oxygen-rich environment after pretreatment. A clean interface between diamond and AlN is seen by cross-sectional transmission electron microscopy.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Cardiff Catalysis Institute (CCI)
Publisher: American Chemical Society
ISSN: 1944-8244
Funders: EPSRC
Date of First Compliant Deposit: 31 October 2019
Date of Acceptance: 11 October 2019
Last Modified: 11 Sep 2020 09:10

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