Optimization of ohmic contact for AlGaN/ GaN HEMT on low resistivity silicon

Benakaprasad, Bhavana, Eblabla, Abdalla M. ORCID: https://orcid.org/0000-0002-5991-892X, Li, Xu, Crawford, Kevin G. and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2020. Optimization of ohmic contact for AlGaN/ GaN HEMT on low resistivity silicon. IEEE Transactions on Electron Devices 63 (3) , pp. 863-868. 10.1109/TED.2020.2968186

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Abstract

In this article, we report the optimization of ohmic contact formation on AlGaN/GaN on low-resistivity silicon. For achieving this, a strategy of uneven AlGaN/GaN was introduced through patterned etching of the substrate under the contact. Various pattern designs (holes, horizontal lines, vertical lines, grid) and varied etch depth (above and below the 2-D electron gas) were investigated. Furthermore, a study of planar and nonplanar ohmic metallization was investigated. Compared to a traditional fabrication strategy, we observed a reduced contact resistance from 0.35 to 0.27 Ω · mm by employing a grid etching approach with a “below channel” etch depth and nonplanar ohmic metallization. In general, measurements of “below channel” test structures exhibited improved contact resistance compared to “above channel” in both planar and nonplanar ohmic metallization

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISSN:	0018-9383
Date of First Compliant Deposit:	16 December 2019
Date of Acceptance:	8 December 2019
Last Modified:	22 Nov 2024 10:15
URI:	https://orca.cardiff.ac.uk/id/eprint/127587

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