Monolithic growth of InAs quantum dots lasers on (001) silicon emitting at 1.55 μm

Li, Zhibo ORCID: https://orcid.org/0000-0002-6913-1426, Shutts, Samuel ORCID: https://orcid.org/0000-0001-6751-7790, Allford, Craig P. ORCID: https://orcid.org/0000-0002-3798-9014, Shi, Bei, Luo, Wei, Lau, Kei May and Smowton, Peter M. ORCID: https://orcid.org/0000-0002-9105-4842 2019. Monolithic growth of InAs quantum dots lasers on (001) silicon emitting at 1.55 μm. Presented at: 2019 IEEE Photonics Conference (IPC), San Antonio, TX, USA, 2- Sept - 3 Oct 2019. 2019 IEEE Photonics Conference (IPC). IEEE, p. 1. 10.1109/IPCon.2019.8908479

Preview

PDF - Accepted Post-Print Version Download (508kB) | Preview

Abstract

Broad-area 1.55 μm InAs quantum dots (QDs) lasers were fabricated based on monolithic growth of InAs/InAlGaAs/InP active structures on nano-patterned (001) silicon substrates. Device optoelectronic properties and materials' optical gain and absorption features were studied to provide experimental support for further optimizations in laser design.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Publisher:	IEEE
Date of First Compliant Deposit:	28 January 2020
Date of Acceptance:	21 November 2019
Last Modified:	07 Nov 2022 09:25
URI:	https://orca.cardiff.ac.uk/id/eprint/129097

Actions (repository staff only)

Edit Item