Li, Zhibo ![]() ![]() ![]() ![]() ![]() |
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Official URL: http://dx.doi.org/10.1109/IPCon.2019.8908479
Abstract
Broad-area 1.55 μm InAs quantum dots (QDs) lasers were fabricated based on monolithic growth of InAs/InAlGaAs/InP active structures on nano-patterned (001) silicon substrates. Device optoelectronic properties and materials' optical gain and absorption features were studied to provide experimental support for further optimizations in laser design.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Published Online |
Status: | Published |
Schools: | Physics and Astronomy |
Publisher: | IEEE |
Date of First Compliant Deposit: | 28 January 2020 |
Date of Acceptance: | 21 November 2019 |
Last Modified: | 07 Nov 2022 09:25 |
URI: | https://orca.cardiff.ac.uk/id/eprint/129097 |
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