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Monolithic growth of InAs quantum dots lasers on (001) silicon emitting at 1.55 μm

Li, Zhibo, Shutts, Samuel, Allford, Craig P., Shi, Bei, Luo, Wei, Lau, Kei May and Smowton, Peter M. 2019. Monolithic growth of InAs quantum dots lasers on (001) silicon emitting at 1.55 μm. Presented at: 2019 IEEE Photonics Conference (IPC), San Antonio, TX, USA, 2- Sept - 3 Oct 2019. 2019 IEEE Photonics Conference (IPC). IEEE, p. 1. 10.1109/IPCon.2019.8908479

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Abstract

Broad-area 1.55 μm InAs quantum dots (QDs) lasers were fabricated based on monolithic growth of InAs/InAlGaAs/InP active structures on nano-patterned (001) silicon substrates. Device optoelectronic properties and materials' optical gain and absorption features were studied to provide experimental support for further optimizations in laser design.

Item Type: Conference or Workshop Item (Paper)
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
Publisher: IEEE
Date of First Compliant Deposit: 28 January 2020
Date of Acceptance: 21 November 2019
Last Modified: 25 May 2021 01:39
URI: http://orca.cardiff.ac.uk/id/eprint/129097

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