Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode

Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, Makarovsky, O., Krier, A. and Patanè, A. 2020. Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode. Applied Physics Letters 116 (14) , 142108. 10.1063/5.0002407

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Abstract

Light emitting diodes (LEDs) in the mid-infrared (MIR) spectral range require material systems with tailored optical absorption and emission at wavelengths λ > 2 μm. Here, we report on MIR LEDs based on In(AsN)/(InAl)As resonant tunneling diodes (RTDs). The N-atoms lead to the formation of localized deep levels in the In(AsN) quantum well (QW) layer of the RTD. This has two main effects on the electroluminescence (EL) emission. By electrical injection of carriers into the N-related levels, EL emission is achieved at wavelengths significantly larger than for the QW emission (λ ∼ 3 μm), extending the output of the diode to λ ∼ 5 μm. Furthermore, for applied voltages well below the flatband condition of the diode, EL emission is observed at energies much larger than those supplied by the applied voltage and/or thermal energy, with an energy gain ΔE > 0.2 eV at room temperature. We attribute this upconversion luminescence to an Auger-like recombination process.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	AIP Publishing
ISSN:	0003-6951
Date of First Compliant Deposit:	20 April 2020
Date of Acceptance:	24 March 2020
Last Modified:	16 Nov 2024 15:15
URI:	https://orca.cardiff.ac.uk/id/eprint/131119

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