Huang, Jianliang, Zhao, Chengcheng, Nie, Biying, Xie, Shiyu ![]() ![]() |
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Official URL: http://dx.doi.org/10.1364/PRJ.385177
Abstract
We report on a high-performance mid-wavelength infrared avalanche photodetector (APD) with separate absorption and multiplication regions. InAs is used as the absorber material and high-bandgap AlAs0.13Sb0.87 is used as the multiplication material. At room temperature, the APD’s peak response wavelength is 3.27 μm, and the 50% cutoff wavelength is 3.5 μm. The avalanche gain reaches 13.1 and the responsivity is 8.09 A/W at 3.27 μm when the applied reverse bias voltage is 14.6 V. The measured peak detectivity
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Publisher: | Optical Society of America |
ISSN: | 2327-9125 |
Date of First Compliant Deposit: | 2 June 2020 |
Date of Acceptance: | 22 February 2020 |
Last Modified: | 09 Jan 2024 18:20 |
URI: | https://orca.cardiff.ac.uk/id/eprint/132122 |
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