High-performance mid-wavelength InAs avalanche photodiode using AlAs013Sb087 as the multiplication layer

Huang, Jianliang, Zhao, Chengcheng, Nie, Biying, Xie, Shiyu ORCID: https://orcid.org/0000-0002-1994-5878, Kwan, Dominic C. M., Meng, Xiao, Zhang, Yanhua, Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481 and Ma, Wenquan 2020. High-performance mid-wavelength InAs avalanche photodiode using AlAs013Sb087 as the multiplication layer. Photonics Research 8 (5) , pp. 755-759. 10.1364/PRJ.385177

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Abstract

We report on a high-performance mid-wavelength infrared avalanche photodetector (APD) with separate absorption and multiplication regions. InAs is used as the absorber material and high-bandgap AlAs0.13Sb0.87 is used as the multiplication material. At room temperature, the APD’s peak response wavelength is 3.27 μm, and the 50% cutoff wavelength is 3.5 μm. The avalanche gain reaches 13.1 and the responsivity is 8.09 A/W at 3.27 μm when the applied reverse bias voltage is 14.6 V. The measured peak detectivity

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	Optical Society of America
ISSN:	2327-9125
Date of First Compliant Deposit:	2 June 2020
Date of Acceptance:	22 February 2020
Last Modified:	12 Nov 2024 05:45
URI:	https://orca.cardiff.ac.uk/id/eprint/132122

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