A step-by-step modelling approach for SiC half-bridge modules considering temperature characteristics

Yang, Peng ORCID: https://orcid.org/0000-0002-8429-7598, Ming, Wenlong ORCID: https://orcid.org/0000-0003-1780-7292 and Liang, Jun ORCID: https://orcid.org/0000-0001-7511-449X 2020. A step-by-step modelling approach for SiC half-bridge modules considering temperature characteristics. Presented at: 2020 IEEE Energy Conversion Congress & Expo (ECCE), Virtual, 11-15 October 2020. 2020 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, pp. 2827-2834. 10.1109/ECCE44975.2020.9235594

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Abstract

In this paper, a detailed step-by-step modellingapproach is proposed for Silicon Carbide (SiC) MOSFET half-bridge power modules. The drain-to-source current, anti-paralleldiode and parasitic capacitors are accurately modelled consider-ing temperature dependency. A step-by-step parameter extractionmethod based on datasheet is introduced. A SPICE model is builtbased on the proposed modelling approach for a commercialpower module. The model is verified by comparing experimentand PSpice simulation results of the same double pulse tester(DPT), which proves the effectiveness of the modelling approachfor analysing switching losses and converter design. The proposedmodelling approach can help the converter designers quickly andaccurately develop their own models for SiC MOSFET powermodules.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Engineering
Publisher:	IEEE
ISBN:	9781728158266
ISSN:	2329-3748
Date of First Compliant Deposit:	17 July 2020
Date of Acceptance:	15 July 2020
Last Modified:	27 May 2023 18:25
URI:	https://orca.cardiff.ac.uk/id/eprint/133557

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