Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on silicon

Lu, Ying, Cao, Victoria, Liao, Mengya, Li, Wei, Tang, Mingchu, Li, Ang, Smowton, Peter ORCID: https://orcid.org/0000-0002-9105-4842, Seeds, Alwyn, Liu, Huiyun and Chen, Siming 2020. Electrically pumped continuous-wave O-band quantum-dot superluminescent diode on silicon. Optics Letters 45 (19) , pp. 5468-5471. 10.1364/OL.401042

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Abstract

High-power, broadband quantum-dot (QD) superluminescent diodes (SLDs) are ideal light sources for optical coherence tomography (OCT) imaging systems but have previously mainly been fabricated on native GaAs- or InP-based substrates. Recently, significant progress has been made to emigrate QD SLDs from native substrates to silicon substrates. Here, we demonstrate electrically pumped continuous-wave InAs QD SLDs monolithically grown on silicon substrates with significantly improved performance thanks to the achievement of a low density of defects in the III-V epilayers. The fabricated narrow-ridge-waveguide device exhibits a maximum 3 dB bandwidth of 103 nm emission spectrum centered at the O-band together with a maximum single facet output power of 3.8 mW at room temperature. The silicon-based SLD has been assessed for application in an OCT system. Under optimized conditions, a predicted axial resolution of ∼5.3µm is achieved with a corresponding output power of 0.66 mW/facet.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	Optical Society of America
ISSN:	0146-9592
Date of First Compliant Deposit:	29 September 2020
Date of Acceptance:	3 August 2020
Last Modified:	04 Dec 2024 21:45
URI:	https://orca.cardiff.ac.uk/id/eprint/135197

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