Watt-level 21-25 GHz integrated Doherty power amplifier in GaAs technology

Ramella, Chiara, Camarchia, Vittorio, Piacibello, Anna, Piacibello, Anna, Pirola, Marco and Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X 2021. Watt-level 21-25 GHz integrated Doherty power amplifier in GaAs technology. IEEE Microwave and Wireless Components Letters 31 (5) , pp. 505-508. 10.1109/LMWC.2021.3069555

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Abstract

This paper presents the design and characterization of a Doherty power amplifier for K-band applications based on the GaAs 150nm pHEMT technology of Qorvo. For the output power combiner, a wideband design approach, based on embedding the output capacitance of the active devices in the combiner, is applied. A state-of-the-art bandwidth of 4 GHz is achieved: in the 21 GHz-25 GHz range, the output power is above 29.5 dBm, with an associated PAE higher than 30 %. At 6 dB output back-off, the PAE is above 19% while the corresponding gain is higher than 10 dB.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISSN:	1531-1309
Date of First Compliant Deposit:	6 May 2021
Date of Acceptance:	25 March 2021
Last Modified:	07 Nov 2023 05:29
URI:	https://orca.cardiff.ac.uk/id/eprint/140664

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