Defect structures in (001) zincblende GaN/3C-SiC nucleation layers

Vacek, Petr, Frentrup, Martin, Lee, Lok Yi, Massabuau, Fabien C.-P., Kappers, Menno J., Wallis, David J. ORCID: https://orcid.org/0000-0002-0475-7583, Gröger, Roman and Oliver, Rachel A. 2021. Defect structures in (001) zincblende GaN/3C-SiC nucleation layers. Journal of Applied Physics 129 (15) , 155306. 10.1063/5.0036366

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Abstract

The defect structure of zincblende GaN nucleation layers grown by metalorganic vapor-phase epitaxy on 3C-SiC/Si (001) was investigated by high-resolution scanning transmission electron microscopy. Perfect dislocations, partial dislocations, and stacking faults are present in the layers. Perfect dislocations are identified as 60° mixed-type and act as misfit dislocations to relieve the compressive lattice mismatch strain in GaN. Stacking faults are mainly bounded by 30° Shockley partial dislocations and rarely by Lomer–Cottrell partial dislocations, both of which are able to relieve the compressive lattice mismatch strain in the layer. We propose that the stacking faults and their partial dislocations originate from the dissociation of perfect dislocations present in the zincblende GaN layer and by direct nucleation of partial dislocations loops from the surface. These are the two main mechanisms that lead to the final defect structure of the zincblende GaN nucleation layers.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	AIP Publishing
ISSN:	0021-8979
Date of First Compliant Deposit:	26 April 2021
Date of Acceptance:	5 April 2021
Last Modified:	19 Apr 2024 17:52
URI:	https://orca.cardiff.ac.uk/id/eprint/140754

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