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Optical and electrical performance of 5 µm InAs/GaSb Type-II superlattice for NOx sensing application

Kesaria, M., Alshahrani, D., Kwan, D., Anyebe, E. and Srivastava, V. 2021. Optical and electrical performance of 5 µm InAs/GaSb Type-II superlattice for NOx sensing application. Materials Research Bulletin 142 , 111424. 10.1016/j.materresbull.2021.111424
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We report on the optical and electrical performance of optimized InAs/GaSb type-II superlattice (T2SL). The optical quality of optimal T2SL is compared with InAs/InAsSb T2SL. Dominant photoluminescence (PL) peak at around 5.3µm at 77 K was obtained for the Ga-based samples with an intensity which is less sensitive to changes in temperature compared to the Ga-free SL. The PL peak intensity of the Ga-based T2SL with an intentional InSb layer was found to be less responsive to changes in temperature and tuned to longer wavelength suitable for NOx sensing. Current-Voltage modelling of the fabricated Photodiode demonstrates that at a temperature of 110K, generation recombination (G-R) and trap assisted tunnelling (TAT) currents dominates below and above an applied bias of ∼0.2 V respectively. However, at higher operating temperature (200 -300 K), diffusion current is prevalent at low applied bias while G-R and TAT are dominant at high applied bias.

Item Type: Article
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
Publisher: Elsevier
ISSN: 0025-5408
Date of First Compliant Deposit: 3 June 2021
Date of Acceptance: 19 May 2021
Last Modified: 15 Oct 2021 19:57

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