Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens

Bishop, S. G., Hadden, J. P. ORCID: https://orcid.org/0000-0001-5407-6754, Hekmati, R., Cannon, J. K., Langbein, W. W. ORCID: https://orcid.org/0000-0001-9786-1023 and Bennett, Anthony ORCID: https://orcid.org/0000-0002-5386-3710 2022. Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens. Applied Physics Letters 120 , 114001. 10.1063/5.0085257

Preview

PDF - Published Version Available under License Creative Commons Attribution. Download (3MB) | Preview

Abstract

Among wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum light at room temperature. In this paper, we report on a bright color center in a semi-polar gallium nitride substrate emitting at room temperature in the near-infrared. We show that a hemispherical solid immersion lens, near index matched to the semiconductor, can be used to enhance the photon collection efficiency by a factor of 4.3 ± 0.1 while improving the lateral resolution by a factor equal to the refractive index of the lens.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Advanced Research Computing @ Cardiff (ARCCA) Engineering Physics and Astronomy
Publisher:	American Institute of Physics
ISSN:	0003-6951
Funders:	EPSRC
Date of First Compliant Deposit:	15 March 2022
Date of Acceptance:	2 March 2022
Last Modified:	08 Jan 2025 22:18
URI:	https://orca.cardiff.ac.uk/id/eprint/148061

Citation Data

Cited 2 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item