Bishop, S. G., Hadden, J. P.  ORCID: https://orcid.org/0000-0001-5407-6754, Hekmati, R., Cannon, J. K., Langbein, W. W. ORCID: https://orcid.org/0000-0001-9786-1023 and Bennett, Anthony ORCID: https://orcid.org/0000-0002-5386-3710
2022.
Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens.
Applied Physics Letters
120
, 114001.
10.1063/5.0085257
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Abstract
Among wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum light at room temperature. In this paper, we report on a bright color center in a semi-polar gallium nitride substrate emitting at room temperature in the near-infrared. We show that a hemispherical solid immersion lens, near index matched to the semiconductor, can be used to enhance the photon collection efficiency by a factor of 4.3 ± 0.1 while improving the lateral resolution by a factor equal to the refractive index of the lens.
| Item Type: | Article |
|---|---|
| Date Type: | Published Online |
| Status: | Published |
| Schools: | Professional Services > Advanced Research Computing @ Cardiff (ARCCA) Schools > Engineering Schools > Physics and Astronomy |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| Funders: | EPSRC |
| Date of First Compliant Deposit: | 15 March 2022 |
| Date of Acceptance: | 2 March 2022 |
| Last Modified: | 08 Jan 2025 22:18 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/148061 |
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