Gate bias voltage dependence of Cardiff admittance model in Ka-band GaAs pHEMTs

Baddeley, Alexander, Azad, Ehsan, Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X, Bell, James ORCID: https://orcid.org/0000-0002-4815-2199 and Tasker, Paul ORCID: https://orcid.org/0000-0002-6760-7830 2022. Gate bias voltage dependence of Cardiff admittance model in Ka-band GaAs pHEMTs. Presented at: IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), Las Vegas, NV, USA, 16-19 January 2022. 2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR). IEEE, pp. 8-10. 10.1109/PAWR53092.2022.9719858

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Abstract

This paper analyzes the dependence vs. gate bias voltage of the coefficients of the Cardiff model in the admittance form. The load-pull measurement data used to extract the model, inclusive of input power sweep, is taken on a GaAs pseudomorphic high electron mobility transistor (pHEMT) at the frequency of 36 G Hz. The gate bias is swept in class C and in class AB and a different set of coefficients is extracted at each bias point. It is observed that the model coefficients can be fitted vs. bias using a linear function within the class C and class AB ranges. This allows to predict the model coefficients within a range of bias voltages with load-pull measurements at only a few bias points, significantly reducing the measurement effort. Using the predicted coefficients, the model shows a global error lower than -31 dB for the DC and fundamental output current.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Engineering
Publisher:	IEEE
ISBN:	978-1-6654-3472-0
Funders:	EPSRC, Qorvo inc.
Date of First Compliant Deposit:	15 March 2022
Date of Acceptance:	17 September 2021
Last Modified:	29 Nov 2022 11:13
URI:	https://orca.cardiff.ac.uk/id/eprint/148386

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