Azad, Ehsan M., Quaglia, Roberto ![]() ![]() ![]() ![]() |
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Official URL: http://dx.doi.org/10.1109/INMMiC54248.2022.9762106
Abstract
This paper presents an analysis of load-pull measurement data of a GaN on SiC high electron mobility transistor (HEMT) at 3.6 GHz, oriented to aid the design of Doherty power amplifiers with multiple DC supply voltages. Fundamental load-pull data in class AB configuration are analyzed to realize the optimum load modulation for the design of the “Main” amplifier at DC bias levels of 28 V and 50 V.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Published Online |
Status: | Published |
Schools: | Engineering |
Publisher: | IEEE |
Date of First Compliant Deposit: | 30 April 2022 |
Date of Acceptance: | 15 March 2022 |
Last Modified: | 06 May 2023 01:13 |
URI: | https://orca.cardiff.ac.uk/id/eprint/149461 |
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