Load-pull data analysis of a GaN on SiC HEMT targeting multi bias Doherty design

Azad, Ehsan M., Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X, Bell, James J. ORCID: https://orcid.org/0000-0002-4815-2199, Chaudhry, Kauser, Nghiem, Anh, Sulaksono, Komo and Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830 2022. Load-pull data analysis of a GaN on SiC HEMT targeting multi bias Doherty design. Presented at: International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits, INMMIC, Cardiff, UK, 7-8 April 2022. Proceedings of the 2022 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits. IEEE, 10.1109/INMMiC54248.2022.9762106

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Abstract

This paper presents an analysis of load-pull measurement data of a GaN on SiC high electron mobility transistor (HEMT) at 3.6 GHz, oriented to aid the design of Doherty power amplifiers with multiple DC supply voltages. Fundamental load-pull data in class AB configuration are analyzed to realize the optimum load modulation for the design of the “Main” amplifier at DC bias levels of 28 V and 50 V.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Engineering
Publisher:	IEEE
Date of First Compliant Deposit:	30 April 2022
Date of Acceptance:	15 March 2022
Last Modified:	06 May 2023 01:13
URI:	https://orca.cardiff.ac.uk/id/eprint/149461

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