GaN based light-emitting diode on silicon (LEDoS) micro-displays for BLU-free full-color projector application

Liu, Zhao Jun, Chong, Wing Cheung, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380 and Lau, Kei May 2013. GaN based light-emitting diode on silicon (LEDoS) micro-displays for BLU-free full-color projector application. Presented at: 2013 IEEE Photonics Conference, IPC 2013, Bellevue, WA, 08-12 September 2013. 2013 IEEE Photonics Conference, IPC 2013. IEEE, pp. 171-172. 10.1109/IPCon.2013.6656489

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Abstract

In this paper, we review the design and fabrication of GaN based light emitting diode on silicon (LEDoS) micro-displays with red, green blue and UV colors by integrating monolithic LED micro-arrays and active matrix substrates using flip-chip technology. A silicon complementary metal-oxide-semiconductor (CMOS) active matrix driving scheme was designed to provide sufficient drive capability and individual controllability of each LED pixel. The LEDoS micro-displays had 30×30 and 60×60 pixels on each single chip with pixel pitch of 140μm and 70μm and corresponding diameters of 100μm and 50μm. LEDoS micro-displays with emission wavelengths of 630nm, 535nm, 445nm and 380nm were fabricated. By integrating the red, green and blue LEDoS chips using a trichroic prism and a projection lens, the world's first full-color 3-LEDoS projector prototype has been demonstrated.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Publisher:	IEEE
ISBN:	9781457715075
Last Modified:	01 Aug 2023 14:19
URI:	https://orca.cardiff.ac.uk/id/eprint/155655

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