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Number of items: 19.

Yan, Zhao, Liu, Shangfeng, Ratiu, Bogdan, Wong, Parco ORCID: https://orcid.org/0000-0003-3770-1380, Zeng, Haotian, Wang, Yangqian, Park, Jaeseong, Jia, Hui, Tang, Mingchu, Liu, Huiyun, Smowton, Peter ORCID: https://orcid.org/0000-0002-9105-4842 and Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 2025. MOCVD-grown InAs/InP quantum dot lasers with low threshold current. Optics Express 33 (15) , pp. 31195-31203. 10.1364/OE.568365
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Li, Jialun, Zhu, Renqiang, Wong, Ka ORCID: https://orcid.org/0000-0003-3770-1380 and May Lau, Kei 2025. Fully-vertical GaN-on-SiC Trench MOSFETs. IEEE Electron Device Letters 46 (2) , pp. 282-285. 10.1109/LED.2024.3520200

Qi, Longheng, Li, Peian, Zhang, Xu and Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380 2023. Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration. Light: Science & Applications 12 , 258. 10.1038/s41377-023-01298-w
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Luo, Wei, Lin, Qi, Huang, Jie, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380, Lin, Liying and Lau, Kei May 2022. InP/GaAsP DWELL lasers grown on (001) Si emitting at 740 nm. Presented at: 28th International Semiconductor Laser Conference (ISLC), Matsue, Japan, 16-19 October 2022. Proceedings of 28th International Semiconductor Laser Conference. IEEE, 10.23919/islc52947.2022.9943341

Liu, Zhaojun, Chong, Wing Cheung, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380 and Lau, Kei May 2015. GaN-based LED micro-displays for wearable applications. Microelectronic Engineering 148 , pp. 98-103. 10.1016/j.mee.2015.09.007

Zou, Xinbo, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380, Chong, Wing Cheung, Ma, Jun and Lau, Kei May 2014. High-efficiency blue and green LEDs grown on Si with 5 micrometer thick GaN buffer. Physica Status Solidi (C) Current Topics in Solid State Physics 11 (3-4) , pp. 730-733. 10.1002/pssc.201300506

Li, Ming, Wang, Yong, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380 and Lau, Kei-May 2014. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition. Chinese Physics B 23 (3) , 038403. 10.1088/1674-1056/23/3/038403

Liu Z, Zhao Jun, Chong, Wing Cheung, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380, Tam, Ka Ho and Kei, May Lau 2013. A novel BLU-free full-color LED projector using LED on silicon micro-displays. IEEE Photonics Technology Letters 25 (23) , pp. 2267-2270. 10.1109/LPT.2013.2285229

Liu, Zhao Jun, Chong, Wing Cheung, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380 and Lau, Kei May 2013. GaN based light-emitting diode on silicon (LEDoS) micro-displays for BLU-free full-color projector application. Presented at: 2013 IEEE Photonics Conference, IPC 2013, Bellevue, WA, 08-12 September 2013. 2013 IEEE Photonics Conference, IPC 2013. IEEE, pp. 171-172. 10.1109/IPCon.2013.6656489

Zou, Xinbo, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380, Zhu, Xueliang, Chong, Wing Cheung, Ma, Jun and Lau, Kei May 2013. High-performance green and yellow LEDs grown on SiO2 nanorod patterned GaN/Si templates. IEEE Electron Device Letters 34 (7) , pp. 903-905. 10.1109/LED.2013.2260126

Chong, Wing Cheung, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380, Liu, Zhao Jun and Lau, Kei May 2013. A novel full-color 3LED projection system using R-G-B light emitting diodes on silicon (LEDoS) micro-displays. Presented at: SID International Symposium, June 2013. SID Symposium Digest of Technical Papers. , vol.44 (1) Blackwell Publishing Ltd, pp. 838-841. 10.1002/j.2168-0159.2013.tb06348.x

Liu, Zhao Jun, Chong, Wing Cheung, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380, Keung, Chi Wing and Lau, Kei May 2013. Investigation of forward voltage uniformity in monolithic light-emitting diode arrays. IEEE Photonics Technology Letters 25 (13) , pp. 1290-1293. 10.1109/LPT.2013.2263223

Ma, Jun, Zhu, Xueliang, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380, Zou, Xinbo and Lau, Kei May 2013. Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers. Journal of Crystal Growth 370 , pp. 265-268. 10.1016/j.jcrysgro.2012.10.028

Liu, Zhao Jun, Chong, Wing Cheung, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380 and Lau, Kei May 2013. 360 PPI flip-chip mounted active matrix addressable light emitting diode on silicon (ledos) micro-displays. IEEE/OSA Journal of Display Technology 9 (8) , pp. 678-682. 10.1109/JDT.2013.2256107

Liu, Zhao Jun, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380, Chong, Wing Cheung and Lau, Kei May 2012. Active matrix programmable monolithic light emitting diodes on silicon (LEDoS) displays. Presented at: 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011, 15 - 20 May 2011. 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011. , vol.42 (1) SID, pp. 1215-1218. 10.1889/1.3621049

Huang, Tondge, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380, Li, Ming, Zhu, Xueliang and Lau, Kei May 2012. Effect of post-gate RTA on leakage current (I off) in GaN MOSHEMTs. Physica Status Solidi (C) 9 (3-4) , pp. 919-922. 10.1002/pssc.201100444

Huang, Tongde, Zhu, Xueliang, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380 and Lau, Kei May 2012. Low-Leakage-Current AlN/GaN MOSHFETs using Al2O3 for Increased 2DEG. IEEE Electron Device Letters 33 (2) , pp. 212-214. 10.1109/LED.2011.2176909

Lee, Chi Ming, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380, Peng, Chen and Lau, Kei May 2011. GaN-based lamb-wave mass-sensors on silicon substrates. Presented at: SENSORS 2010, 9th IEEE Sensors Conference, 2010, Waikoloa, HI, 01 - 04 November 2010. Published in: Kenny, Thomas and Fedder, Gary eds. Proceedings of IEEE Sensors. IEEE, pp. 2008-2011. 10.1109/ICSENS.2010.5689946

Liu, Zhao Jun, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380, Tang, Chak Wah and Lau, Kei May 2009. GaN-based monolithic LED micro-arrays. Presented at: 2009 14th OptoElectronics and Communications Conference, Hong Kong, 13-17 July 2009. 2009 14th OptoElectronics and Communications Conference. IEEE, 10.1109/OECC.2009.5213302

This list was generated on Sun Nov 9 10:14:17 2025 GMT.


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