Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

Li, Ming, Wang, Yong, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380 and Lau, Kei-May 2014. Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition. Chinese Physics B 23 (3) , 038403. 10.1088/1674-1056/23/3/038403

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Abstract

High-performance low-leakage-current AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (111) substrates grown by metal organic chemical vapor deposition (MOCVD) with a novel partially Magnesium (Mg)-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally one. A 1-μm gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10−8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown AlGaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μm gate length T-shaped gate HEMTs were also investigated.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	IOP Publishing
ISSN:	1674-1056
Last Modified:	05 Jun 2023 09:08
URI:	https://orca.cardiff.ac.uk/id/eprint/155656

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