High-efficiency blue and green LEDs grown on Si with 5 micrometer thick GaN buffer

Zou, Xinbo, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380, Chong, Wing Cheung, Ma, Jun and Lau, Kei May 2014. High-efficiency blue and green LEDs grown on Si with 5 micrometer thick GaN buffer. Physica Status Solidi (C) Current Topics in Solid State Physics 11 (3-4) , pp. 730-733. 10.1002/pssc.201300506

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Abstract

High-efficiency blue and green light-emitting diodes (LEDs) were grown on planar Si substrates using a 5 µm thick GaN buffer by metalorganic chemical vapor deposition (MOCVD). AlN/GaN superlattices (SLs)–based interlayers were inserted twice for stress balancing and dislocation reduction. Smooth surface and low dislocation density of 1 × 109 cm–2 were achieved. The light output power (LOP) of bare 300 × 300 µm2 447 nm–LEDs and 510 nm–LEDs on Si was measured to be 2.15 mW and 0.85 mW at 20 mA, respectively. At –15 V, leakage current of as low as 3 µA was achieved for 447 nm–LEDs while higher leakage current was measured for green LEDs. After Si substrate removal, the LOP of packaged 440 nm– and 500 nm–LEDs reached 8.50 mW and 4.85 mW at 20 mA, respectively.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Last Modified:	05 Jun 2023 09:08
URI:	https://orca.cardiff.ac.uk/id/eprint/155662

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