GaN-based lamb-wave mass-sensors on silicon substrates

Lee, Chi Ming, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380, Peng, Chen and Lau, Kei May 2011. GaN-based lamb-wave mass-sensors on silicon substrates. Presented at: SENSORS 2010, 9th IEEE Sensors Conference, 2010, Waikoloa, HI, 01 - 04 November 2010. Published in: Kenny, Thomas and Fedder, Gary eds. Proceedings of IEEE Sensors. IEEE, pp. 2008-2011. 10.1109/ICSENS.2010.5689946

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Abstract

Lamb-wave mass-sensors were fabricated with MOCVD-grown GaN-based thin films on silicon substrates. Crystalline GaN provides an alternative choice of material for fabricating Lamb-wave sensors. The advantageous properties of this material include high acoustic velocity, high chemical, mechanical and thermal stability, and the potential to integrate with a wide range of GaN-based devices such as high electron mobility transistor (HEMT) circuits, light emitting diodes (LED) and other photonic devices. We successfully developed GaN-based Lamb-wave mass-sensors in small size (membrane size of ~1mm x 1mm). The sensors showed good signal strength and mass sensitivity, comparable to other mass-sensors using conventional materials. This novel approach not only allows robust low-cost sensors to be fabricated, but also enables future integration with generic GaN-based devices on the same chip (i.e. lab-on-a-chip).

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	IEEE
ISBN:	9781424481682
Related URLs:	Organisation
Last Modified:	12 Jun 2023 15:41
URI:	https://orca.cardiff.ac.uk/id/eprint/155664

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