Low-Leakage-Current AlN/GaN MOSHFETs using Al2O3 for Increased 2DEG

Huang, Tongde, Zhu, Xueliang, Wong, Ka Ming ORCID: https://orcid.org/0000-0003-3770-1380 and Lau, Kei May 2012. Low-Leakage-Current AlN/GaN MOSHFETs using Al2O3 for Increased 2DEG. IEEE Electron Device Letters 33 (2) , pp. 212-214. 10.1109/LED.2011.2176909

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Abstract

Metal-oxide-semiconductor heterostructure field effect transistors (MOSHFETs) were fabricated with an AlN/GaN heterostructure grown on Si substrates. A 7-nm Al 2O 3 serving as both gate dielectric under the gate electrode and passivation layer in the access region was used. It was found that the Al 2O 3 was superior to SiN x in increasing the 2-D electron gas (2DEG) density and thereby reducing the access resistance. In addition, the off-state leakage current (I off) in these AlN/GaN MOSHFETs was reduced by four orders of magnitude to 7.6 × 10 -5 mA/mm as a result of the Al 2O 3 gate dielectric, compared to that of AlN/GaN HFETs. Meanwhile, the subthreshold slope was improved to a nearly ideal value of 62 mV/dec because of the extremely low I off. The MOSHFETs with 1-μm gate length exhibited good DC characteristics. A maximum drain current of 745 mA/mm and a peak extrinsic transconductance of 280 mS/mm were achieved

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	Institute of Electrical and Electronics Engineers
ISSN:	0741-3106
Last Modified:	13 Jul 2023 15:31
URI:	https://orca.cardiff.ac.uk/id/eprint/155669

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