Indium-flush technique for C-band InAs/InP quantum dots

Yuan, Jiajing, Dear, Calum, Jia, Hui, Park, Jae-Seong, Hou, Yaonan, El Hajraoui, Khalil, Zeng, Haotian, Deng, Huiwen, Yang, Junjie, Tang, Mingchu, Chen, Siming, Ramasse, Quentin M., Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704, Seeds, Alwyn and Liu, Huiyun 2024. Indium-flush technique for C-band InAs/InP quantum dots. APL Materials 12 (12) , 121109. 10.1063/5.0239360

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Abstract

High-quality InAs/InP quantum dots (QDs) emitting at 1550 nm are indispensable to realize high-performance telecom C-band lasers. In general, a longer emission (>1550 nm) with a broad spectral character has been obtained with InAs/InP QDs. Here, we proposed the use of the indium-flush (IF) method to shorten the emission and improve the optical properties of InAs/InP QDs. By exploiting IF, the full-width at half-maximum of the room-temperature QD photoluminescence spectra is narrowed from 89.2 to 47.9 meV, with a blue shift of 300 nm (from 1824 to 1522 nm). The scanning transmission electron microscopy and electron energy loss spectroscopy results reveal the atomic-level mechanism of the IF method, which uniformly modify the height of InAs/InP QDs in a controlled manner and form distinct Al-rich and In-rich regions. Finally, InAs/InP (001) QD lasers with the IF method have been demonstrated with a low threshold current density per QD layer of 106 A/cm2. We demonstrated both in terms of mechanism model and device performance that the IF method could serve as a robust strategy for the growth of high-performance C-band InAs/InP QD lasers via molecular beam epitaxy.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	American Institute of Physics
ISSN:	2166-532X
Funders:	EPSRC
Date of First Compliant Deposit:	4 December 2024
Date of Acceptance:	18 November 2024
Last Modified:	05 Dec 2024 11:31
URI:	https://orca.cardiff.ac.uk/id/eprint/174499

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