The effect of Al2O3 nanoparticles on hexagonal boron nitride films resulting from high-temperature annealing

Li, Qiang, Liu, Kangkang, Chen, Ransheng, Fang, Wannian, Zhang, Zhihao, Chen, Youwei, Liu, Haifeng, Lin, Ziyan, Liu, Yuhuai and Wang, Tao 2025. The effect of Al2O3 nanoparticles on hexagonal boron nitride films resulting from high-temperature annealing. Nanomaterials 15 (7) , 484. 10.3390/nano15070484

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Abstract

A simple two-step approach was proposed to obtain hBN thin films with high crystalline quality, meaning that the films were initially prepared by using an RF magnetron sputtering technique and subsequently followed by a post-annealing process at a high temperature. In the case of introducing Al2O3 nanoparticles, the effects of annealing temperature from 1000 °C to 1300 °C and annealing time from 0.5 h to 1.5 h on the recrystallization process of the grown hBN films were systematically studied by using XRD and SEM technologies. The introduction of Al2O3 impurities during the annealing process successfully reduced the transition temperature of hexagonal phase BN by more than 300 °C. The crystalline quality of hBN films grown by RF magnetron sputtering could be effectively enhanced under annealing at 1100 °C for 1 h. The DUV detectors were prepared using the hBN films before and after annealing, and showed a notable improvement in detector performance by using annealed films. It has significant application value in further enhancing the performance of DUV photodetectors based on high-quality hBN films.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Additional Information:	License information from Publisher: LICENSE 1: URL: https://creativecommons.org/licenses/by/4.0/, Start Date: 2025-03-24
Publisher:	MDPI
Date of First Compliant Deposit:	2 April 2025
Date of Acceptance:	21 March 2025
Last Modified:	02 Apr 2025 09:45
URI:	https://orca.cardiff.ac.uk/id/eprint/177339

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