Effect of buffer layer thickness on recombination in zincblende InGaN/GaN quantum wells

Xu, X., Dyer, D., Frentrup, M., Fieldhouse-Allen, W. R., Kappers, M. J., Kusch, G., Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583, Oliver, R. A. and Binks, D. J. 2025. Effect of buffer layer thickness on recombination in zincblende InGaN/GaN quantum wells. Journal of Physics D: Applied Physics 58 (47) , 475101. 10.1088/1361-6463/ae1d8d

PDF - Published Version Available under License Creative Commons Attribution. Download (1MB)

Abstract

InGaN/GaN quantum wells grown in the zincblende phase along the [001] direction are free of the internal electric fields that reduce the radiative recombination rate in conventional quantum wells grown along the c-axis in the wurtzite phase. However, heteroepitaxial growth and reduced thermodynamic stability compared to the wurtzite phase typically results in a significant density of stacking faults (SFs) in zincblende GaN, which impacts emission efficiency when they intersect quantum wells. Here it is shown that increasing the buffer layer thickness that lies between the substrate and the active region significantly reduces the density of SFs reaching the quantum well, and thereby increases the emission efficiency.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Schools > Engineering
Additional Information:	License information from Publisher: LICENSE 1: URL: https://creativecommons.org/licenses/by/4.0/, Type: cc-by
Publisher:	IOP Publishing
ISSN:	0022-3727
Date of First Compliant Deposit:	26 November 2025
Date of Acceptance:	10 November 2025
Last Modified:	26 Nov 2025 09:33
URI:	https://orca.cardiff.ac.uk/id/eprint/182669

Actions (repository staff only)

Edit Item