Comparative analysis of in-situ SiN- and GaN-caped AlGaN/GaN Schottky barrier diodes for sub-THz applications

Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Collier, Arthur ORCID: https://orcid.org/0009-0005-9564-7513, Bhat, Aasif Mohammad and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2026. Comparative analysis of in-situ SiN- and GaN-caped AlGaN/GaN Schottky barrier diodes for sub-THz applications. Presented at: 19th United Conference on Millimeter Waves and Terahertz Technologies, Birmingham, UK, 23-26 August 2026. Proceedings of UCMMT. IEEE, 10.1109/ucmmt70119.2026.11719275

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Abstract

This paper demonstrates lateral AlGaN/GaN Schottky barrier diodes (SBDs) on SiC substrates with GaN and in-situ Si3N4 cap layers. A clear bias-dependent RF trade-off is observed...

Item Type:	Conference or Workshop Item - published (Paper)
Date Type:	Published Online
Status:	In Press
Schools:	Schools > Engineering
Publisher:	IEEE
ISBN:	9798319536570
ISSN:	2639-4545
Last Modified:	19 Oct 2026 11:00
URI:	https://orca.cardiff.ac.uk/id/eprint/190290

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