Growth of p- and n-type bismuth telluride thin films by co-evaporation

Zou, Helin, Rowe, David Michael and Min, Gao ORCID: https://orcid.org/0000-0001-9591-5825 2001. Growth of p- and n-type bismuth telluride thin films by co-evaporation. Journal of Crystal Growth 222 (1-2) , pp. 82-87. 10.1016/S0022-0248(00)00922-2

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Abstract

Both n- and p-type bismuth telluride thin films have been deposited by co-evaporator on glass substrates. The conditions for deposition have been investigated as a function of substrate temperature (Ts) and flux ratio (Fr=F(Bi)/F(Te)) and optimised to achieve a high thermoelectric power factor. The quality of the deposited films, e.g. structure, composition and morphology, has been examined by X-ray diffraction (XRD), energy-dispersive X-ray analysis (EDXA), and atomic force microscope (AFM). The thermoelectric properties of the thin films have been studied by room-temperature measurement of the Seebeck coefficient, Hall coefficient and electrical resistivity. Both the crystallinity and the transport properties have been found to be strongly affected by nonstoichiometry with the highly stoichiometric samples exhibiting a high crystallinity and high thermoelectric power factor. It has been observed that the Seebeck coefficient and electrical conductivity of n-type (αn, σn) and p-type (αp, σp) bismuth telluride films were found to be about −228 μV/K, 0.77×103 Ω−1 cm−1 and 81 μV/K, 3.1×103 Ω−1 cm−1, respectively. The results indicate that the good quality bismuth telluride thin films grown by co-evaporator in both p- and n-type are promising candidates for use in micro-Peltier modules.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	Q Science > QD Chemistry
Uncontrolled Keywords:	Thermoelectric; Thin film; Bi2Te3; Evaporation
Publisher:	Elsevier
ISSN:	0022-0248
Last Modified:	17 Oct 2022 09:03
URI:	https://orca.cardiff.ac.uk/id/eprint/1919

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