Gilbertson, A. M., Kormányos, A., Buckle, Philip Derek  ORCID: https://orcid.org/0000-0001-9508-7783, Fearn, M., Ashley, T., Lambert, C. J., Solin, S. A. and Cohen, L. F.
2011.
Room temperature ballistic transport in InSb quantum well nanodevices.
Applied Physics Letters
99
(24)
, 242101.
10.1063/1.3668107
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Official URL: http://dx.doi.org/10.1063/1.3668107
Abstract
We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 106 A/cm2. This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Subjects: | Q Science > QC Physics |
| Uncontrolled Keywords: | aluminium compounds; ballistic transport; current density; III-V semiconductors; indium compounds; mesoscopic systems; quantum well devices; semiconductor heterojunctions; semiconductor quantum wells |
| Additional Information: | 3 pp. Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 20/02/2014). |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| Date of First Compliant Deposit: | 30 March 2016 |
| Last Modified: | 19 May 2023 18:05 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/24185 |
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