Room temperature ballistic transport in InSb quantum well nanodevices

Gilbertson, A. M., Kormányos, A., Buckle, Philip Derek ORCID: https://orcid.org/0000-0001-9508-7783, Fearn, M., Ashley, T., Lambert, C. J., Solin, S. A. and Cohen, L. F. 2011. Room temperature ballistic transport in InSb quantum well nanodevices. Applied Physics Letters 99 (24) , 242101. 10.1063/1.3668107

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Abstract

We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 106 A/cm2. This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	aluminium compounds; ballistic transport; current density; III-V semiconductors; indium compounds; mesoscopic systems; quantum well devices; semiconductor heterojunctions; semiconductor quantum wells
Additional Information:	3 pp. Pdf uploaded in accordance with publisher's policy at http://www.sherpa.ac.uk/romeo/issn/0003-6951/ (accessed 20/02/2014).
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date of First Compliant Deposit:	30 March 2016
Last Modified:	19 May 2023 18:05
URI:	https://orca.cardiff.ac.uk/id/eprint/24185

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