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Room temperature ballistic transport in InSb quantum well nanodevices

Gilbertson, A. M., Kormányos, A., Buckle, Philip Derek, Fearn, M., Ashley, T., Lambert, C. J., Solin, S. A. and Cohen, L. F. 2011. Room temperature ballistic transport in InSb quantum well nanodevices. Applied Physics Letters 99 (24) , 242101. 10.1063/1.3668107

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We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 106 A/cm2. This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: aluminium compounds; ballistic transport; current density; III-V semiconductors; indium compounds; mesoscopic systems; quantum well devices; semiconductor heterojunctions; semiconductor quantum wells
Additional Information: 3 pp. Pdf uploaded in accordance with publisher's policy at (accessed 20/02/2014).
Publisher: American Institute of Physics
ISSN: 0003-6951
Date of First Compliant Deposit: 30 March 2016
Last Modified: 04 Jun 2017 03:38

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