The effect of strained confinement layers in InP self-assembled quantum dot material

Elliott, Stella, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842, Krysa, A. B. and Beanland, R. 2012. The effect of strained confinement layers in InP self-assembled quantum dot material. Semiconductor Science and Technology 27 (9) , 094008. 10.1088/0268-1242/27/9/094008

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Abstract

We investigated a series of self-assembled InP quantum dot structures. The Ga concentrations of the GaxIn(1−x)P upper confining quantum well layers were varied from x = 0.43 to x = 0.58, centering on a strain compensated structure. All were grown on a (Al0.3Ga0.7)0.52In0.48P lower confinement layer. Across this range of composition the dot emission wavelength changed approximately linearly with the Ga fraction. Of the compositions used, x = 0.54 gave the best defined and largest magnitude dot absorption spectrum, corresponding to the largest dot density. This resulted in the lowest overall threshold current density with a reduced threshold current temperature sensitivity at room temperature and above. These results are confirmed over two growth series.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Institute of Physics
ISSN:	0268-1242
Last Modified:	21 Oct 2022 10:11
URI:	https://orca.cardiff.ac.uk/id/eprint/39378

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