Elliott, Stella, Smowton, Peter Michael  ORCID: https://orcid.org/0000-0002-9105-4842, Krysa, A. B. and Beanland, R.
2012.
The effect of strained confinement layers in InP self-assembled quantum dot material.
Semiconductor Science and Technology
27
(9)
, 094008.
10.1088/0268-1242/27/9/094008
|
Abstract
We investigated a series of self-assembled InP quantum dot structures. The Ga concentrations of the GaxIn(1−x)P upper confining quantum well layers were varied from x = 0.43 to x = 0.58, centering on a strain compensated structure. All were grown on a (Al0.3Ga0.7)0.52In0.48P lower confinement layer. Across this range of composition the dot emission wavelength changed approximately linearly with the Ga fraction. Of the compositions used, x = 0.54 gave the best defined and largest magnitude dot absorption spectrum, corresponding to the largest dot density. This resulted in the lowest overall threshold current density with a reduced threshold current temperature sensitivity at room temperature and above. These results are confirmed over two growth series.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Subjects: | Q Science > QC Physics |
| Publisher: | Institute of Physics |
| ISSN: | 0268-1242 |
| Last Modified: | 21 Oct 2022 10:11 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/39378 |
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