The (3 × 3) reconstruction and its evolution during the nitridation of GaAs(001)

Lu, J., Westwood, David, Haworth, L., Hill, P. and Macdonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 1999. The (3 × 3) reconstruction and its evolution during the nitridation of GaAs(001). Thin Solid Films 343-44 , pp. 567-570. 10.1016/S0040-6090(98)01716-7

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Abstract

Nitridation of GaAs(001) was performed using a radio frequency nitrogen plasma source in a molecular beam epitaxy chamber. The nitrogen-induced GaAs(001) (3 × 3) reconstruction was investigated by reflection high energy electron diffraction (RHEED) and X-ray photoemission spectroscopy (XPS). The temperature dependence of the (3 × 3) reconstruction as well as its evolution during further nitridation was observed by RHEED; we found that the (3 × 3) reconstruction could be obtained in the temperature range 400–580 °C by a very low dose of atomic nitrogen deposition. The nitrogen coverage in the (3 × 3) reconstruction is determined to be in the range 0.2–0.4 ML using XPS. We also discuss the atomic model of the (3 × 3) reconstruction and the energetics of its formation and stability.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Zincblende GaN; Nitridation; GaAs(001); Reflection high energy electron diffraction; X-ray photoemission spectroscopy
Publisher:	Elsevier
ISSN:	0040-6090
Last Modified:	24 Oct 2022 10:46
URI:	https://orca.cardiff.ac.uk/id/eprint/45816

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