Edwards, Gareth, Smowton, Peter Michael ![]() |
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Edwards, Gareth, Sobiesierski, Angela, Westwood, David and Smowton, Peter ![]() |
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Edwards, G. T., Westwood, David I. and Smowton, Peter Michael ![]() |
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Lu, J., Haworth, L., Westwood, David and Macdonald, John Emyr ![]() |
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Haworth, L., Lu, J., Westwood, David and MacDonald, John Emyr ![]() |
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Haworth, L., Lu, J., Westwood, David and Macdonald, John Emyr ![]() |
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Westwood, David, Brown, I. H., Linsell, D. N. J. and Matthai, Clarence Cherian 2000. Dynamics of the growth of InAs quantum dots on GaAs(001) substrates. Presented at: Semiconductor quantum dots, San Francisco, CA, 5-8 April 1999. Published in: Moss, S. C., Ila, D., Lee, H. W. H. and Norris, D. J. eds. Semiconductor quantum dots : symposium held April 5-8, 1999, San Francisco, California, U.S.A. Materials Research Society symposia proceedings (571) Warrendale, PA: Materials Research Society, pp. 337-342. |
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Westwood, David I., Sobiesierski, Zbigniew and Matthai, Clarence Cherian 1999. The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects. Applied Surface Science 144-45 , pp. 484-487. 10.1016/S0169-4332(98)00845-9 |
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Lu, J., Westwood, David, Haworth, L., Hill, P. and Macdonald, John Emyr ![]() |
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Lu, J., Haworth, L., Hill, P., Westwood, David and Macdonald, John Emyr ![]() |
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Parbrook, P. J., Ozanyan, K. B., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Zbigniew and Westwood, David I. 1998. Optical monitoring of InP monolayer growth rates. Applied Physics Letters 73 (3) , pp. 345-347. 10.1063/1.121829 |
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Westwood, David I., Sobiesierski, Zbigniew, Matthai, Clarence Cherian, Steimetz, E., Zettler, T. and Richter, W. 1998. Processes of quantum dot formation in the InAs on GaAs(001) system: A reflectance anisotropy spectroscopy study. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16 (4) , pp. 2358-2366. 10.1116/1.590175 |
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Sobiesierski, Zbigniew and Westwood, David I. 1998. Reflectance anisotropy spectroscopy and the growth of low-dimensional materials. Thin Solid Films 318 (1-2) , pp. 140-147. 10.1016/S0040-6090(97)01153-X |
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Hill, P., Lu, J., Haworth, L., Westwood, David and Macdonald, John Emyr ![]() |
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Sobiesierski, Zbigniew, Westwood, David I. and Matthai, Clarence Cherian 1998. Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces. Journal of Physics: Condensed Matter 10 (1) , pp. 1-43. 10.1088/0953-8984/10/1/005 |
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Westwood, David I., Sobiesierski, Zbigniew, Steimetz, E., Zettler, T. and Richter, W. 1998. On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films. Applied Surface Science 123-24 , pp. 347-351. 10.1016/S0169-4332(97)00525-4 |
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Parbrook, P. J., Ozanyan, K. B., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Zbigniew and Westwood, David I. 1998. Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy. Applied Surface Science 123-24 , pp. 313-318. 10.1016/S0169-4332(97)00454-6 |
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Haworth, L., Lu, J., Hill, P., Westwood, David, Macdonald, John Emyr ![]() |
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Sobiesierski, Zbigniew, Westwood, David I. and Elliott, Martin ![]() |
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Ozanyan, K. B., Parbrook, P. J., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Zbigniew and Westwood, David I. 1997. In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy. Journal of Applied Physics 82 (1) , pp. 474-476. 10.1063/1.365585 |
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Sobiesierski, Zbigniew, Westwood, David I., Parbrook, P. J., Ozanyan, K. B., Hopkinson, M. and Whitehouse, C. R. 1997. As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy. Applied Physics Letters 70 (11) , pp. 1423-1425. 10.1063/1.118595 |
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Cooper, C., Blood, Peter, Molloy, C., Chen, X. Y., Westwood, David I., Smowton, Peter Michael ![]() |
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Hill, P., Westwood, David, Howarth, L., Lu, J. and MacDonald, John Emyr ![]() |
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Sobiesierski, Zbigniew, Westwood, David I. and Woolf, D.A. 1996. Reflectance anisotropy spectroscopy study of GaAs overlayer growth on submonolayer coverages of Si on the GaAs(001)-c(4x4) surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14 (4) , pp. 3065-3069. 10.1116/1.589065 |
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Steimetz, E., Zettler, J. T., Richter, W., Westwood, David I., Woolf, D. A. and Sobiesierski, Zbigniew 1996. Optical monitoring of the development of InAs quantum dots on GaAs(001) by reflectance anisotropy spectroscopy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14 (4) , pp. 3058-3064. 10.1116/1.589064 |
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Levermann, A. H., Woolf, D. A., Westwood, David and MacDonald, John Emyr ![]() |
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Lees, A. K., Zhang, J., Sobiesierski, Zbigniew, Taylor, A. G., Xie, M. H., Joyce, B. and Westwood, David I. 1996. New hydrogen desorption kinetics from vicinal Si(001) surfaces as observed by reflectance anisotropy. Presented at: 23rd International Conference on the Physics of Semiconductors, Berlin, Germany, 21-26 July 1996. Published in: Scheffler, M. and Zimmermann, R. eds. The Physics of Semiconductors: Proceedings of the 23rd International Conference on the Physics of Semiconductors, ICPS, Berlin, 21-26 July 1996. , vol.2 Singapore: World Scientific Publishing, pp. 955-958. |
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Ke, Mao-long, Westwood, David, Matthai, Clarence Cherian and Williams, R. H. 1996. Ballistic electron emission microscopy of InAs grown on GaAs(100). Surface Science 352-4 , pp. 861-864. 10.1016/0039-6028(95)01288-5 |
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Ke, Mao-Long, Westwood, David, Matthai, Clarence Cherian, Richardson, Bernard E. ![]() |
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Ke, Mao-long, Westwood, David, Matthai, Clarence Cherian, Richardson, Bernard E. ![]() |
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Ke, Mao-long, Westwood, David I., Wilks, S., Heghoyan, S., Kestle, A., Matthai, Clarence Cherian, Richardson, Bernard E. ![]() |
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Ke, Mao-long, Westwood, David, Matthai, Clarence Cherian and Richardson, Bernard E. ![]() |
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Williams, J. P., Westwood, David I., Sobiesierski, Zbigniew and Aubrey, J. E. 1994. Growth optimization of n‐type GaAs on GaAs(201) substrates. Journal of Applied Physics 76 (1) , pp. 612-614. 10.1063/1.357056 |
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Tabata, A., Benyattou, T., Guillot, G., Clark, S. A., MacDonald, John Emyr ![]() |
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Sobiesierski, Zbigniew, Westwood, David I., Woolf, D. A., Fukui, T. and Hasegawa, H. 1993. Photoluminescence spectroscopy of near‐surface quantum wells: Electronic coupling between quantized energy levels and the sample surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 11 (4) , pp. 1723-1726. 10.1116/1.586469 |
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Tabata, A., Benyattou, T., Pogany, D., Guillot, G., Clark, S. A., MacDonald, John Emyr ![]() |
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Woolf, D. A., Williams, J. P., Westwood, David I., Sobiesierski, Zbigniew, Aubrey, J. E. and Williams, R. H. 1993. The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies. Journal of Crystal Growth 127 (1-4) , pp. 913-917. 10.1016/0022-0248(93)90759-P |
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Clark, S. A., MacDonald, John Emyr ![]() |
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Woolf, D. A., Sobiesierski, Zbigniew, Westwood, David I. and Williams, R. H. 1992. The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies. Journal of Applied Physics 71 (10) , pp. 4908-4915. 10.1063/1.350638 |
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Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I., Frova, A. and Coluzza, C. 1992. Creation of radiative hydrogen-related states within strained InxGa1-xAs/GaAs quantum wells by hydrogenation. Solid State Communications 81 (1) , pp. 125-128. 10.1016/0038-1098(92)90585-W |
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Sobiesierski, Zbigniew and Westwood, David I. 1992. Coupling between near-surface Inx Ga1−x As / GaAs(100) quantum wells and the sample surface. Superlattices and Microstructures 12 (2) , pp. 267-271. 10.1016/0749-6036(92)90350-E |
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Sobiesierski, Zbigniew, Woolf, D. A. and Westwood, David I. 1992. Incorporation of H into Inx Ga1−x As / GaAs quantum wells: Optical spectroscopy of H-related radiative states. Superlattices and Microstructures 12 (2) , pp. 261-265. 10.1016/0749-6036(92)90349-A |
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Williams, P., Westwood, David I., Sobiesierski, Zbigniew and Aubrey, E. 1992. The molecular beam epitaxial growth of GAAS/GAAS(201): doping and growth temperature studies. Presented at: 21st International Conference on the Physics of Semiconductors, Beijing, China, 10-14 August 1992. Published in: Jiang, P. and Zheng, H.-Z. eds. Proceedings of the 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992. Singapore: World Scientific Publishing, |
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Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1991. Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy. Applied Physics Letters 58 (6) , pp. 628-630. 10.1063/1.104550 |
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Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1990. Characterization of GaAs buffer layers 0.1 μm thick grown on Si(100). Materials Science and Engineering: B 5 (2) , pp. 275-278. 10.1016/0921-5107(90)90068-M |
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Sobiesierski, Zbigniew, Westwood, David I. and Williams, R. H. 1990. Raman scattering from InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy. Materials Science and Engineering: B 5 (2) , pp. 265-268. 10.1016/0921-5107(90)90066-K |
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Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1990. Variation of strain in single and multilayer (InxGa1−xAs) structures grown on Si(100), and Si(111), by molecular beam epitaxy. Superlattices and Microstructures 7 (4) , pp. 419-421. 10.1016/0749-6036(90)90237-2 |
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Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1990. Photoluminescence measurements for GaAS grown on SI(100) and SI(111) by molecular-beam epitaxy. Presented at: 20th International Conference on the Physics of Semiconductors, Thessaloniki, Greece, 6-10 August 1990. Published in: Joannopoulos, John D. and Anastassakis, E. eds. 20th International Conference on the Physics of Semiconductors (ICPS), Thessaloniki, Greece, Aug. 6-10 1990. 20TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, VOLS 1-3. London: World Scientific Publishing, pp. 1081-1084. |
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