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Number of items: 48.

Edwards, Gareth, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Westwood, David I. 2008. Dry etching of anisotropic microstructures for distributed bragg reflectors in AlGaInP/GaAs laser structures. IEEE Journal of Selected Topics in Quantum Electronics 14 (4) , pp. 1098-1103. 10.1109/JSTQE.2008.918260

Edwards, Gareth, Sobiesierski, Angela, Westwood, David and Smowton, Peter ORCID: https://orcid.org/0000-0002-9105-4842 2007. Fabrication of high-aspect-ratio, sub-micron gratings in AlGaInP/GaAs laser structures using a BCl3/Cl-2/Ar inductively coupled plasma. Semiconductor Science and Technology 22 (9) , pp. 1010-1015. 10.1088/0268-1242/22/9/006

Edwards, G. T., Westwood, David I. and Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 2006. Selective etching of AlGaInP laser structures in a BCl3/Cl2 inductively coupled plasma. Semiconductor Science and Technology 21 (4) , 513. 10.1088/0268-1242/21/4/017

Lu, J., Haworth, L., Westwood, David and Macdonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 2001. Initial stages of molecular-beam epitaxy growth of GaN on 6H-SiC(0001). Applied Physics Letters 78 (8) , pp. 1080-1083. 10.1063/1.1350430
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Haworth, L., Lu, J., Westwood, David and Macdonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 2000. Atomic hydrogen cleaning, nitriding and annealing InSb (100). Applied Surface Science 166 (1-4) , pp. 253-258. 10.1016/S0169-4332(00)00425-6

Haworth, L., Lu, J., Westwood, David and MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 2000. Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100). Applied Surface Science 166 (1-4) , pp. 418-422. 10.1016/S0169-4332(00)00460-8

Westwood, David, Brown, I. H., Linsell, D. N. J. and Matthai, Clarence Cherian 2000. Dynamics of the growth of InAs quantum dots on GaAs(001) substrates. Presented at: Semiconductor quantum dots, San Francisco, CA, 5-8 April 1999. Published in: Moss, S. C., Ila, D., Lee, H. W. H. and Norris, D. J. eds. Semiconductor quantum dots : symposium held April 5-8, 1999, San Francisco, California, U.S.A. Materials Research Society symposia proceedings (571) Warrendale, PA: Materials Research Society, pp. 337-342.

Lu, J., Westwood, David, Haworth, L., Hill, P. and Macdonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 1999. The (3 × 3) reconstruction and its evolution during the nitridation of GaAs(001). Thin Solid Films 343-44 , pp. 567-570. 10.1016/S0040-6090(98)01716-7

Westwood, David I., Sobiesierski, Zbigniew and Matthai, Clarence Cherian 1999. The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects. Applied Surface Science 144-45 , pp. 484-487. 10.1016/S0169-4332(98)00845-9

Lu, J., Haworth, L., Hill, P., Westwood, David and Macdonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 1999. Nitridation of the GaAs(001) surface: Thermal behavior of the (3×3) reconstruction and its evolution. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17 (4) , pp. 1659-1676. 10.1116/1.590806

Westwood, David I., Sobiesierski, Zbigniew, Matthai, Clarence Cherian, Steimetz, E., Zettler, T. and Richter, W. 1998. Processes of quantum dot formation in the InAs on GaAs(001) system: A reflectance anisotropy spectroscopy study. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16 (4) , pp. 2358-2366. 10.1116/1.590175

Parbrook, P. J., Ozanyan, K. B., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Zbigniew and Westwood, David I. 1998. Optical monitoring of InP monolayer growth rates. Applied Physics Letters 73 (3) , pp. 345-347. 10.1063/1.121829
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Sobiesierski, Zbigniew and Westwood, David I. 1998. Reflectance anisotropy spectroscopy and the growth of low-dimensional materials. Thin Solid Films 318 (1-2) , pp. 140-147. 10.1016/S0040-6090(97)01153-X

Hill, P., Lu, J., Haworth, L., Westwood, David and Macdonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 1998. An XPS study of the effect of nitrogen exposure time and temperature on the GaAs(001) surface using atomic nitrogen. Applied Surface Science 123-4 , pp. 126-124. 10.1016/S0169-4332(97)00539-4

Sobiesierski, Zbigniew, Westwood, David I. and Matthai, Clarence Cherian 1998. Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces. Journal of Physics: Condensed Matter 10 (1) , pp. 1-43. 10.1088/0953-8984/10/1/005

Westwood, David I., Sobiesierski, Zbigniew, Steimetz, E., Zettler, T. and Richter, W. 1998. On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films. Applied Surface Science 123-24 , pp. 347-351. 10.1016/S0169-4332(97)00525-4

Parbrook, P. J., Ozanyan, K. B., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Zbigniew and Westwood, David I. 1998. Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy. Applied Surface Science 123-24 , pp. 313-318. 10.1016/S0169-4332(97)00454-6

Haworth, L., Lu, J., Hill, P., Westwood, David, Macdonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692, Hartmann, N., Schneider, A. and Zahn, D. T. 1998. Formation of an Sb-N compound during nitridation of InSb (001) substrates using atomic nitrogen. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16 (4) , pp. 2254-2261. 10.1116/1.590158

Sobiesierski, Zbigniew, Westwood, David I. and Elliott, Martin ORCID: https://orcid.org/0000-0002-9254-9898 1997. Reflectance anisotropy spectra from Si δ-doped GaAs(001): Correlation of linear electro-optic effect with integrated surface field. Physical Review B: Condensed Matter and Materials Physics 56 (23) , pp. 15277-15281. 10.1103/PhysRevB.56.15277
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Ozanyan, K. B., Parbrook, P. J., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Zbigniew and Westwood, David I. 1997. In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy. Journal of Applied Physics 82 (1) , pp. 474-476. 10.1063/1.365585
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Sobiesierski, Zbigniew, Westwood, David I., Parbrook, P. J., Ozanyan, K. B., Hopkinson, M. and Whitehouse, C. R. 1997. As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy. Applied Physics Letters 70 (11) , pp. 1423-1425. 10.1063/1.118595
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Hill, P., Westwood, David, Howarth, L., Lu, J. and MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 1997. Nitridation of the GaAs (001) surface using atomic nitrogen. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 15 (4) , pp. 1133-1139. 10.1116/1.589427

Cooper, C., Blood, Peter, Molloy, C., Chen, X. Y., Westwood, David I., Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842 and Somerford, D. 1997. New approach to blue-shifting asymmetric quantum wells. Presented at: In-plane Semiconductor Lasers: From Ultraviolet to Midinfrared, San Jose, CA, USA, 10-13 February 1997. Published in: Choi, H. K. and Zory, P. S. eds. Proceedings of In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, 10-13 February 1997, San Jose, California. Proceedings of SPIE (3001) Bellingham, WA: SPIE, pp. 184-191. 10.1117/12.273787

Sobiesierski, Zbigniew, Westwood, David I. and Woolf, D.A. 1996. Reflectance anisotropy spectroscopy study of GaAs overlayer growth on submonolayer coverages of Si on the GaAs(001)-c(4x4) surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14 (4) , pp. 3065-3069. 10.1116/1.589065

Steimetz, E., Zettler, J. T., Richter, W., Westwood, David I., Woolf, D. A. and Sobiesierski, Zbigniew 1996. Optical monitoring of the development of InAs quantum dots on GaAs(001) by reflectance anisotropy spectroscopy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14 (4) , pp. 3058-3064. 10.1116/1.589064

Levermann, A. H., Woolf, D. A., Westwood, David and MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692 1996. An investigation by spot profile analysis low energy electron diffraction of Si grown on GaAs(001). Surface Science 352-54 , pp. 812-816. 10.1016/0039-6028(95)01281-8

Ke, Mao-Long, Westwood, David, Matthai, Clarence Cherian, Richardson, Bernard E. ORCID: https://orcid.org/0000-0002-9510-0455 and Williams, R. H. 1996. Hot-electron transport through Au/GaAs and Au/GaAs/AlAs heterojunction interfaces: ballistic-electron-emission-microscopy measurement and Monte Carlo simulation. Physical Review B 53 (8) , 4845. 10.1103/PhysRevB.53.4845

Ke, Mao-long, Westwood, David, Matthai, Clarence Cherian, Richardson, Bernard E. ORCID: https://orcid.org/0000-0002-9510-0455 and Williams, R. H. 1996. Ballistic electron emission microscopy of Au-InAs-GaAs system. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14 (4) , pp. 2786-2789. 10.1116/1.588833

Ke, Mao-long, Westwood, David, Matthai, Clarence Cherian and Williams, R. H. 1996. Ballistic electron emission microscopy of InAs grown on GaAs(100). Surface Science 352-4 , pp. 861-864. 10.1016/0039-6028(95)01288-5

Lees, A. K., Zhang, J., Sobiesierski, Zbigniew, Taylor, A. G., Xie, M. H., Joyce, B. and Westwood, David I. 1996. New hydrogen desorption kinetics from vicinal Si(001) surfaces as observed by reflectance anisotropy. Presented at: 23rd International Conference on the Physics of Semiconductors, Berlin, Germany, 21-26 July 1996. Published in: Scheffler, M. and Zimmermann, R. eds. The Physics of Semiconductors: Proceedings of the 23rd International Conference on the Physics of Semiconductors, ICPS, Berlin, 21-26 July 1996. , vol.2 Singapore: World Scientific Publishing, pp. 955-958.

Ke, Mao-long, Westwood, David I., Wilks, S., Heghoyan, S., Kestle, A., Matthai, Clarence Cherian, Richardson, Bernard E. ORCID: https://orcid.org/0000-0002-9510-0455 and Williams, R. H. 1995. Ballistic electron emission microscopy of strained and relaxed In0.35Ga0.65As/AlAs interfaces. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 13 (4) , p. 1684. 10.1116/1.587878

Ke, Mao-long, Westwood, David, Matthai, Clarence Cherian and Richardson, Bernard E. ORCID: https://orcid.org/0000-0002-9510-0455 1995. Ballistic elecron emission microscopy of InAs/Ga1-xA1xAs relaxed heterostructure interfaces. Materials Science and Engineering: B 35 (1-3) , pp. 349-352. 10.1016/0921-5107(95)01392-X

Williams, J. P., Westwood, David I., Sobiesierski, Zbigniew and Aubrey, J. E. 1994. Growth optimization of n‐type GaAs on GaAs(201) substrates. Journal of Applied Physics 76 (1) , pp. 612-614. 10.1063/1.357056
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Tabata, A., Benyattou, T., Guillot, G., Clark, S. A., MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692, Westwood, David and Williams, R. H. 1994. Strain relaxation studied by photoluminescence and by double crystal X-ray diffraction measurements in strained InGaAs. Materials Science and Engineering: B 22 (2-3) , pp. 222-226. 10.1016/0921-5107(94)90248-8

Sobiesierski, Zbigniew, Westwood, David I., Woolf, D. A., Fukui, T. and Hasegawa, H. 1993. Photoluminescence spectroscopy of near‐surface quantum wells: Electronic coupling between quantized energy levels and the sample surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 11 (4) , pp. 1723-1726. 10.1116/1.586469

Tabata, A., Benyattou, T., Pogany, D., Guillot, G., Clark, S. A., MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692, Westwood, David and Williams, R. H. 1993. Photoluminescence study of the 2D electron gas formed at the interface of strained InGaAs/InP single heterostructures. Applied Surface Science 65-66 , pp. 814-820. 10.1016/0169-4332(93)90761-Y

Woolf, D. A., Williams, J. P., Westwood, David I., Sobiesierski, Zbigniew, Aubrey, J. E. and Williams, R. H. 1993. The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies. Journal of Crystal Growth 127 (1-4) , pp. 913-917. 10.1016/0022-0248(93)90759-P

Clark, S. A., MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692, Westwood, David and Williams, R. H. 1992. Relaxation in InxGa1-xAs/InP for compressive and tensile strain. Journal of Crystal Growth 121 (4) , pp. 743-750. 10.1016/0022-0248(92)90582-4

Woolf, D. A., Sobiesierski, Zbigniew, Westwood, David I. and Williams, R. H. 1992. The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies. Journal of Applied Physics 71 (10) , pp. 4908-4915. 10.1063/1.350638
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Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I., Frova, A. and Coluzza, C. 1992. Creation of radiative hydrogen-related states within strained InxGa1-xAs/GaAs quantum wells by hydrogenation. Solid State Communications 81 (1) , pp. 125-128. 10.1016/0038-1098(92)90585-W

Williams, P., Westwood, David I., Sobiesierski, Zbigniew and Aubrey, E. 1992. The molecular beam epitaxial growth of GAAS/GAAS(201): doping and growth temperature studies. Presented at: 21st International Conference on the Physics of Semiconductors, Beijing, China, 10-14 August 1992. Published in: Jiang, P. and Zheng, H.-Z. eds. Proceedings of the 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992. Singapore: World Scientific Publishing,

Sobiesierski, Zbigniew, Woolf, D. A. and Westwood, David I. 1992. Incorporation of H into Inx Ga1−x As / GaAs quantum wells: Optical spectroscopy of H-related radiative states. Superlattices and Microstructures 12 (2) , pp. 261-265. 10.1016/0749-6036(92)90349-A

Sobiesierski, Zbigniew and Westwood, David I. 1992. Coupling between near-surface Inx Ga1−x As / GaAs(100) quantum wells and the sample surface. Superlattices and Microstructures 12 (2) , pp. 267-271. 10.1016/0749-6036(92)90350-E

Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1991. Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy. Applied Physics Letters 58 (6) , pp. 628-630. 10.1063/1.104550
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Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1990. Characterization of GaAs buffer layers 0.1 μm thick grown on Si(100). Materials Science and Engineering: B 5 (2) , pp. 275-278. 10.1016/0921-5107(90)90068-M

Sobiesierski, Zbigniew, Westwood, David I. and Williams, R. H. 1990. Raman scattering from InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy. Materials Science and Engineering: B 5 (2) , pp. 265-268. 10.1016/0921-5107(90)90066-K

Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1990. Photoluminescence measurements for GaAS grown on SI(100) and SI(111) by molecular-beam epitaxy. Presented at: 20th International Conference on the Physics of Semiconductors, Thessaloniki, Greece, 6-10 August 1990. Published in: Joannopoulos, John D. and Anastassakis, E. eds. 20th International Conference on the Physics of Semiconductors (ICPS), Thessaloniki, Greece, Aug. 6-10 1990. 20TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, VOLS 1-3. London: World Scientific Publishing, pp. 1081-1084.

Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1990. Variation of strain in single and multilayer (InxGa1−xAs) structures grown on Si(100), and Si(111), by molecular beam epitaxy. Superlattices and Microstructures 7 (4) , pp. 419-421. 10.1016/0749-6036(90)90237-2

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